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VS-GT175DA120U の電気的特性と機能

VS-GT175DA120UのメーカーはVishayです、この部品の機能は「Insulated Gate Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-GT175DA120U
部品説明 Insulated Gate Bipolar Transistor
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-GT175DA120U Datasheet, VS-GT175DA120U PDF,ピン配置, 機能
www.vishay.com
VS-GT175DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 175 A
SOT-227
PRODUCT SUMMARY
VCES
IC(DC)
VCE(on) typical at 100 A, 25 °C
IF(DC)
Package
Circuit
1200 V
175 A at 90 °C (1)
1.73 V
32 A at 90 °C
SOT-227
Single Switch Diode
Note
(1) Maximum collector current admitted is 100 A, to not exceed the
maximum temperature of terminals
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery
• TJ maximum = 150 °C
• Fully isolated package
• Speed 4 kHz to 30 kHz
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Very low VCE(on)
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
TC = 25 °C
TC = 90 °C
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
TC = 25 °C
IF
TC = 90 °C
Gate to emitter voltage
Power dissipation, IGBT
VGE
TC = 25 °C
PD
TC = 90 °C
Power dissipation, diode
Isolation voltage
PD
VISOL
TC = 25 °C
TC = 90 °C
Any terminal to case, t = 1 min
Note
(1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals
MAX.
1200
288
175
450
450
54
32
± 20
1087
522
219
105
2500
UNITS
V
A
V
W
V
Revision: 13-Sep-13
1 Document Number: 93990
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-GT175DA120U pdf, ピン配列
www.vishay.com
VS-GT175DA120U
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Junction and storage temperature range
Junction to case
IGBT
Diode
TJ, TStg
RthJC
-40
-
-
Case to heatsink
Weight
RthCS
Flat, greased surface
-
-
Mounting torque
-
Case style
SOT-227
TYP.
-
-
-
0.05
30
-
MAX.
150
0.115
0.57
-
-
1.3
UNITS
°C
°C/W
g
Nm
160
140
120
DC
100
80
60
40
20
0
0 40 80 120 160 200 240 280 320
IC - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
300
275 VGE = 15 V
250
225 TJ = 125 °C
200
175
150
125 TJ = 25 °C
TJ = 150 °C
100
75
50
25
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE - Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
of IGBT
160
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80
IF - Continuous Forward Current (A)
Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature
Diode Leg
200
TJ = 125 °C
160
120
TJ = 25 °C
80
TJ = 150 °C
40
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VF - Forward Voltage Drop Characteristics (V)
Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
Revision: 13-Sep-13
3 Document Number: 93990
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-GT175DA120U 電子部品, 半導体
www.vishay.com
1
VS-GT175DA120U
Vishay Semiconductors
0.1 0.75
0.50
0.25
0.01
0.1
0.05
0.02
DC
0.001
0.0001
0.001
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1 1
10
Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
1
0.1
0.01
0.75
0.50
0.25
0.1
0.05
0.02
DC
0.001
0.0001
0.001
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1 1
10
Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
1000
100
10
1
0.1
0.01
1
10
100
1000
10 000
VCE (V)
Fig. 18 - IGBT Rverse Bias SOA, TJ = 150 °C, VGE = 15 V
Revision: 13-Sep-13
6 Document Number: 93990
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-GT175DA120U

Insulated Gate Bipolar Transistor

Vishay
Vishay


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