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PDF VS-GB90DA60U Data sheet ( Hoja de datos )
| Número de pieza | VS-GB90DA60U | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VS-GB90DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 90 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
IF DC
Package
Circuit
600 V
90 A at 90 °C
2.40 V
108 A at 90 °C
SOT-227
Single Switch Diode
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate-to-emitter voltage
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
Isolation voltage
PD
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 90 °C
TC = 25 °C
TC = 90 °C
TC = 25 °C
TC = 90 °C
TC = 25 °C
TC = 90 °C
Any terminal to case, t = 1 min
MAX.
600
147
90
300
300
180
108
± 20
625
300
379
182
2500
UNITS
V
A
V
W
V
Revision: 13-Sep-13
1 Document Number: 94771
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
4
3.5 Eon
3
2.5
Eoff
2
1.5
1
0.5
0
0 10 20 30 40 50
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 360 V, VGE = 15 V, Diode used: 60APH06
1 td(on)
td(off)
tr
0.1 tf
0.01
0
10 20 30 40 50 60
Rg (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 360 V,
IC = 100 A, VGE = 15 V, Diode used: 60APH06
200
180
160 125 °C
140
VR = 200 V
IF = 50 A
120
100
80 25 °C
60
40
100
diF/dt (A/μs)
1000
Fig. 13 - Typical Reverse RecoveryTime vs. dIF/dt, of Diode
VS-GB90DA60U
Vishay Semiconductors
2000
1500
VR = 200 V
IF = 50 A
125 °C
1000
500
25 °C
0
100
1000
diF/dt (A/μs)
Fig. 14 - Typical Stored Charge vs. dIF/dt of Diode
35
VR = 200 V
30 IF = 50 A
25
20 125 °C
15
10 25 °C
5
0
100
1000
diF/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt of Diode
Revision: 13-Sep-13
5 Document Number: 94771
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet VS-GB90DA60U.PDF ] | |
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