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PDF VS-GB90SA120U Data sheet ( Hoja de datos )
| Número de pieza | VS-GB90SA120U | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GB90SA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 90 A
SOT-227
PRODUCT SUMMARY
VCES
VCE(on) typical at 75 A, 25 °C
IC DC
Package
Circuit
1200 V
3.3 V
90 A at 90 °C
SOT-227
Single Switch no Diode
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
TC = 25 °C
TC = 90 °C
Pulsed collector current
ICM
Clamped inductive load current
ILM
Gate to emitter voltage
VGE
Power dissipation, IGBT
TC = 25 °C
PD
TC = 90 °C
Isolation voltage
VISOL
Any terminal to case, t = 1 min
Note
(1) Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals
MAX.
1200
149
90
200
200
± 20
862
414
2500
UNITS
V
A
V
W
V
Revision: 13-Sep-13
1 Document Number: 94725
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
1000
100
10
VS-GB90SA120U
Vishay Semiconductors
1
10
100
1000
10 000
VCE (V)
Fig. 12 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V
50 V
1000 V
1
L
VC *
D.U.T.
2
* Driver same type as D.U.T.; VC = 80 % of Vce(max.)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 13a - Clamped Inductive Load Test Circuit
R = VCC
ICM
D.U.T.
Rg
+
- VCC
Fig. 13b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
-+
-5V
Rg
L
D.U.T./
driver
+
-
VCC
Fig. 14a - Switching Loss Test Circuit
Revision: 13-Sep-13
5 Document Number: 94725
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet VS-GB90SA120U.PDF ] | |
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