VS-UFB170FA60 Datasheet PDF - Vishay
| Part Number | VS-UFB170FA60 | |
| Description | Insulated Ultrafast Rectifier Module | |
| Manufacturers | Vishay | |
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VS-UFB170FA60
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 170 A
SOT-227
PRODUCT SUMMARY
VR
IF(AV) per module at TC = 76 °C
trr
Type
Package
600 V
170 A
60 ns
Modules - Diode FRED Pt®
SOT-227
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Very low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-UFB170FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
VR
IF
IFSM
PD
VISOL
TJ, TStg
TEST CONDITIONS
TC = 90 °C
TC = 25 °C
TC = 90 °C
Any terminal to case, t = 1 minute
MAX.
600
94
850
233
2500
- 55 to 175
UNITS
V
A
W
V
°C
Revision: 22-Jul-13
1 Document Number: 94814
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
VS-UFB170FA60
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 22-Jul-13
5 Document Number: 94814
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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