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PDF 2SA1943 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1943 | |
| Descripción | TO-3P Plastic-Encapsulate Transistors | |
| Fabricantes | JCST | |
| Logotipo |  |
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 1. - PNP Transistor, (-)230V, (TO-3P)  Hay una vista previa y un enlace de descarga de 2SA1943 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SA1943 TRANSISTOR (PNP)
FEATURES
z High Collector Current Capability
z High Power Dissipation
z High Frequency
z High Voltage
z Complement to 2SA5200
TO – 3P
1. BASE
2. COLLECTOR
3. EMITTER
APPLICATIONS
z High-Fidelity Audio Output Amplifier
z General Purpose Power Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
PCM
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Collector Power Dissipation (TC=25℃)
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-230
-230
-5
-15
3.5
150
36
150
-55~+150
Unit
V
V
V
A
W
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
IC=-0.1mA,IE=0
IC=-50mA,IB=0
-230
-230
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
Collector cut-off current
ICBO VCB=-230V,IE=0
Emitter cut-off current
IEBO VEB=-5V,IC=0
DC current gain
hFE(1)
hFE(2)*
VCE=-5V, IC=-1A
VCE=-5V, IC=-7A
55
35
Collector-emitter saturation voltage
VCE(sat)
IC=-8A,IB=-0.8A
Base-emitter voltage
VBE VCE=-5V, IC=-7A
Collector output capacitance
Cob VCB=-10V,IE=0, f=1MHz
Transition frequency
fT VCE=-5V,IC=-1A
*Pulse test
CLASSIFICATION OF hFE (1)
RANK
RANGE
R
55-110
Typ
360
30
O
80-160
Max
-5
-5
160
-3
-1.5
Unit
V
V
V
μA
μA
V
V
pF
MHz
A,Jul,2012
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SA1943.PDF ] | |
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