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GLT41316-12PL の電気的特性と機能

GLT41316-12PLのメーカーはETCです、この部品の機能は「64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE」です。


製品の詳細 ( Datasheet PDF )

部品番号 GLT41316-12PL
部品説明 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
メーカ ETC
ロゴ ETC ロゴ 




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GLT41316-12PL Datasheet, GLT41316-12PL PDF,ピン配置, 機能
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features :
65,536 words by 16 bits organization.
Fast access time and cycle time.
Dual WE Input.
Low power dissipation.
Read-Modify-Write, RAS -Only Refresh,
CAS -Before- RAS Refresh, Hidden
Refresh and Test Mode Capability.
256 refresh cycles per 4ms.
Available in 40-pin 400 mil SOJ,and 40/44
pin TSOP (II).
Single 5.0V±10% Power Supply.
All inputs and Outputs are TTL
compatible. Fast Page Mode operation.
Description :
The GLT41316 is a 65,536 x 16 bit high-
performance CMOS dynamic random access
memory. The GLT41316 offers Fast Page
mode ,and has both BYTE WRITE and
WORD WRITE access cycles via two WE
pins. The GLT41316 has symmetric address
and accepts 256-cycle refresh in 4ms
interval.
All inputs are TTL compatible. Fast
Page Mode operation allows random access
up to 256x16 bits, within a page, with cycle
times as short as 18ns.
The GLT41316 is best suited for
graphics, and DSP applications requiring
high performance memories.
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC)
Max. Column Address Access Time, (tAA)
Min. Fast Page Mode Cycle Time, (tPC)
Min. Read/Write Cycle Time, (tRC)
Max. CAS Access Time (tCAC)
30
30 ns
15 ns
18 ns
65 ns
10 ns
35
35 ns
18 ns
21 ns
70 ns
11 ns
40
40 ns
20 ns
23 ns
75 ns
12 ns
45
45 ns
22 ns
25 ns
80 ns
12 ns
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-1-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.

1 Page





GLT41316-12PL pdf, ピン配列
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Absolute Maximum Ratings*
Capacitance*
TA=25°C, VCC=5V±10%, VSS=0V
Operating Temperature, TA (ambient)
Symbol
Parameter
.......................................-0°C to +70°C
Storage Temperature(plastic)....-55°C to +150°C CIN1 Address Input
Voltage Relative to VSS...............-1.0V to + 7.0V
Short Circuit Output Current......................50mA
Power Dissipation......................................1.0W
CIN2
COUT
RAS , CAS , UW , LW , OE
Data Input/Output
Max. Unit
5 pF
7 pF
7 pF
*Note: Operation above Absolute Maximum Ratings *Note: Capacitance is sampled and not 100% tested
can adversely affect device reliability.
Electrical Specifications
l WE means UW and LW .
l All voltages are referenced to GND.
l After power up, wait more than 100µs and then, execute eight CAS -before- RAS or RAS -only
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-3-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.


3Pages


GLT41316-12PL 電子部品, 半導体
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
AC Characteristics (0°C TA 70°C, See note 1,2)
Test condition:VCC=5.0V±10%, VIH/VIL=2.4V/0.8V,VOH/VOL=2.4V/0.4V
Parameter
tRAC = 30 ns tRAC = 35 ns tRAC = 40 ns tRAC = 45 ns
Symbo MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes
l
Read/Write Cycle Time
tRC 65 - 70 - 75 - 80 - ns
Read Midify Write Cycle Time
tRWC
80
-
99
- 105 - 110 - ns
Access Time from RAS
tRAC - 30 - 35 - 40 - 45 ns 3,4
Access Time from CAS
tCAC - 10 - 11 - 12 - 12 ns 3,4
Access Time from Column Address
tAA - 15 - 18 - 20 - 22 ns 3,4
CAS to Output in Low-Z
tCLZ 0
0 - 0 - 0 - ns 3
Output Buffer Turn-off Delay from CAS tOFF 3 8 3 8 3 8 3 8 ns 7
Transition Time(Rise and Fall)
tT 3 50 3 50 3 50 3 50 ns 2
RAS Precharge Time
tRP 25 - 25 - 25 - 25 - ns
RAS Pulse Width
tRAS 30 100k 35 100k 40 100K 45 100K ns
RAS Hold Time
tRSH
10
-
12
-
12
-
13
- ns
CAS Hold Time
tCSH
30
-
36
-
40
-
46
- ns
CAS Pulse Width
tCAS 10 10000 12 10000 12 10000 13 10000 ns
RAS to CAS Delay Time
tRCD 13 20 17 24 18 28 18 33 ns 4
RAS to Column Address Delay Time
tRAD 10 15 12 17 13 20 13 23 ns 4
CAS to RAS Precharge Time
tCRP
5
-
5
-
5
-
5
- ns 8
Row Address Setup Time
tASR 0 - 0 - 0 - 0 - ns
Row Address Hold Time
tRAH
7
-
7
-
8
-
8
- ns
Column Address Setup Time
tASC 0 - 0 - 0 - 0 - ns
Column Address Hold Time
tCAH
6
-
6
-
6
-
6
- ns
Column Address Hold Time Referenced tAR
26 - 30 - 34 - 39 - ns
to RAS
Column Address Lead Time Referenced tRAL 15 - 18 - 20 - 23 - ns
to RAS
Read Command Setup Time
tRCS
0
-
0
-
0
-
0
- ns
Read Command Hold Time Referenced tRRH
0
-
0
-
0
-
0
- ns 9
to RAS
Read Command Hold Time Referenced tRCH
0
-
0
-
0
-
0
- ns 9
to CAS
WE Hold Time Referenced to CAS
tWCH
6
-
6
-
6
-
6
- ns 10
Write Command Hold Time Referenced tWCR 26 - 30 - 34 - 39 - ns 5
to RAS
WE Pulse Width
tWP 6 - 6 - 6 - 6 - ns 10
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-6-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.

6 Page



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部品番号部品説明メーカ
GLT41316-12P

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

ETC
ETC
GLT41316-12PL

64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

ETC
ETC


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