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AD100-8-TO52-S1 の電気的特性と機能

AD100-8-TO52-S1のメーカーはPacific Silicon Sensorです、この部品の機能は「Photodiode」です。


製品の詳細 ( Datasheet PDF )

部品番号 AD100-8-TO52-S1
部品説明 Photodiode
メーカ Pacific Silicon Sensor
ロゴ Pacific Silicon Sensor ロゴ 




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AD100-8-TO52-S1 Datasheet, AD100-8-TO52-S1 PDF,ピン配置, 機能
Pacific Silicon Sensor Series 8 Data Sheet
Part Description AD100-8-TO52-S1
Order # 06-035
ACTIVE AREA: 0.00785 mm 2
(100 µm DIA)
Ø 5.40
Ø 3.00 116°
VIEWING
Ø 4.70
ANGLE
PIN 1
CATHODE
Ø0.46
3 PL
Ø 2.54
PIN CIRCLE
FRONTSIDE VIEW
2.70
3.60
±1
12.7
3 PL
PIN 4
CASE
PIN 3
ANODE
BACKSIDE VIEW
FEATURES
• ∅ 100 µm active area
High gain at low bias voltage
Fast rise time
Low capacitance
DESCRIPTION
0.00785 mm2 High Speed, High Gain Avalanche
Photodiode with N on P construction. Hermetically
packaged in a TO-52-S1 with a clear borosilicate glass
window cap.
APPLICATIONS
High speed optical
communications
Laser range finder
Medical equipment
High speed photometry
S
ABSOLUTE MAXIMUM RATING
SYMBOL PARAMETER MIN
TSTG
TOP
TSOLDERING
Storage Temp
Operating Temp
Soldering Temp
10 seconds
-55
-40
Electrical Power
Dissipation @ 22°C
-
Optical Peak Value,
once for 1 second
-
IPH (DC)
Continuous Optical
Operation
-
IPH (AC)
Pulsed Signal Input
50 µs “on” / 1 ms “off”
-
MAX
+125
+100
+260
100
200
250
1
UNITS
°C
°C
°C
mW
mW
µA
mA
SPECTRAL RESPONSE at M = 100
60
50
40
30
20
10
0
400 500 600 700 800 900 1000 1100
WAVELENGTH (nm)
C
ELECTRO-OPTICAL CHARACTERISTICS @ 22 °C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN TYP MAX UNITS
ID Dark Current
M = 100*
C Capacitance
M = 100*
VBR Breakdown Voltage
ID = 2 µA
Temperature Coefficient of VBR
Responsivity
M = 100; = 0 V; λ = 800 nm
--- 50 100 pA
--- 0.8 --- pF
120 190 --- V
0.35 0.45 0.55 V/K
45 50 --- A/W
∆ƒ3dB
Bandwidth
-3dB
2 --- --- GHz
tr Rise Time
Optimum Gain
--- --- 180 ps
50 60 ---
“Excess Noise” factor
M = 100
--- 2.2 ---
“Excess Noise” index
Noise Current
M = 100
M = 100
--- 0.2 ---
--- 0.15 --- pA/Hz1/2
Max Gain
200 --- ---
NEP
Noise Equivalent Power
M = 100; λ = 880 nm
---
3.0 X 10-15
--- W/Hz1/2
* Measurement conditions: Setup of photo current 50 pA at M = 1 and irradiated by a 680 nm, 60 nm bandwidth LED. Increase the photo
current up to 5.0 nA, (M = 100) by internal multiplication due to an increasing bias voltage.
8/23/2010
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部品番号部品説明メーカ
AD100-8-TO52-S1

Photodiode

Pacific Silicon Sensor
Pacific Silicon Sensor


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