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Número de pieza | STD60N3LH5 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STD60N3LH5
N-channel 30 V, 0.0072 Ω typ., 48 A STripFET™ V Power MOSFET
in a DPAK package
Datasheet - not recommended for new design
Features
Order code VDS @ Tjmax RDS(on) max
ID
TAB
t(s)3
c1
duDPAK
olete ProFigure 1. Internal schematic diagram
Obs'7$%
uct(s) -*
te Prod6
STD60N3LH5 35 V
0.008 Ω
48 A
• RDS(on) * Qg industry benchmark
• Extremely low on-resistance RDS(on)
• Very low switching gate charge
• High avalanche ruggedness
• Low gate drive power losses
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to a FOM that is among the best in its
class.
Obsole $0Y
Order code
STD60N3LH5
Table 1. Device summary
Marking
Packages
60N3LH5
DPAK
Packaging
Tape and reel
August 2013
DocID14079 Rev 5
This is information on a product in full production. This is information on a product still in production but not recommended
for new designs.
1/19
www.st.com
1 page STD60N3LH5
Electrical characteristics
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
Min. Typ.
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=10 V, ID= 24 A,
RG=4.7 Ω, VGS= 10 V
(Figure 13 and
Figure 18)
-6
- 33
- 19
- 4.2
Max. Unit
- ns
- ns
- ns
- ns
Table 7. Source drain diode
)Symbol
Parameter
Test conditions
t(sISD
ucISDM
Source-drain current
Source-drain current (pulsed)(1)
dVSD Forward on voltage
ISD=24 A, VGS=0
rotrr
te PQrr
leIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=48 A,
di/dt =100 A/µs,
VDD=20 V, (Figure 15)
Obsolete Product(s) - Obso1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 48 A
- 192 A
- 1.1 V
- 25
ns
- 18.5
nC
- 1.5
A
DocID14079 Rev 5
5/19
19
5 Page STD60N3LH5
Package mechanical data
Table 8. DPAK (TO-252) type A mechanical data
mm
Dim.
Min. Typ. Max.
A 2.20
2.40
A1 0.90
1.10
A2 0.03
0.23
b 0.64
0.90
b4 5.20
5.40
c 0.45
t(s)c2 0.48
D 6.00
ucD1
rodE 6.40
PE1
tee
lee1 4.40
soH 9.35
bL 1.00
- O(L1)
t(s)L2
cL4 0.60
uR
Obsolete ProdV2 0°
0.60
0.60
6.20
5.10
6.60
4.70
2.28
4.60
10.10
1.50
2.80
0.80
1.00
0.20
8°
DocID14079 Rev 5
11/19
19
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet STD60N3LH5.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD60N3LH5 | N-channel Power MOSFET | STMicroelectronics |
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