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GI810 の電気的特性と機能

GI810のメーカーはGeneral Semiconductorです、この部品の機能は「GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER」です。


製品の詳細 ( Datasheet PDF )

部品番号 GI810
部品説明 GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
メーカ General Semiconductor
ロゴ General Semiconductor ロゴ 




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GI810 Datasheet, GI810 PDF,ピン配置, 機能
GI810 THRU GI818
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
DO-204AC
1.0
(25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
0.300 (7.6)
0.230 (5.8)
1.0
(25.4)
MIN.
0.140 (3.6)
0.104 (2.6)
DIA.
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
®
FEATURES
Plastic package has
Underwriters Laboratory
Flammability Classification 94V-0
High temperature metallurgically
bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
Fast switching for high efficiency
1.0 Ampere operation at TA=75°C with no thermal
runaway
Typical IR less than 0.1µA
High temperature soldering guaranteed:
350°C/10 seconds 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AC molded plastic over glass body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=75°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at TA=75°C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
GI
810
50
35
50
I(AV)
GI
GI GI GI
GI GI
811
812 814 816
817 818 UNITS
100 200 400 600 800 1000 Volts
70 140 280 420 560 700 Volts
100 200 400 600 800 1000 Volts
1.0 Amp
IFSM
VF
IR
trr
CJ
RΘJA
TJ, TSTG
30.0
1.2
10.0
100.0
750.0
25.0
45.0
-65 to +175
Amps
Volts
µA
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=1.0A, VR=30V, di/dt=50A/µs
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
4/98

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共有リンク

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部品番号部品説明メーカ
GI810

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

General Semiconductor
General Semiconductor
GI810

(GI810 - GI818) Glass Passivated Junction Fast Switching Rectifier

Vishay Siliconix
Vishay Siliconix
GI811

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

General Semiconductor
General Semiconductor
GI811

(GI810 - GI818) Glass Passivated Junction Fast Switching Rectifier

Vishay Siliconix
Vishay Siliconix


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