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GS70328SJ-8I の電気的特性と機能

GS70328SJ-8IのメーカーはETCです、この部品の機能は「32K x 8 256Kb Asynchronous SRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 GS70328SJ-8I
部品説明 32K x 8 256Kb Asynchronous SRAM
メーカ ETC
ロゴ ETC ロゴ 




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GS70328SJ-8I Datasheet, GS70328SJ-8I PDF,ピン配置, 機能
SOJ, TSOP
Commercial Temp
Industrial Temp
32K x 8
256Kb Asynchronous SRAM
GS70328SJ/TS
7, 8, 10, 12, 15 ns
3.3 V VDD
Corner VDD and VSS
Features
• Fast access time: 7, 8, 10, 12, 15 ns
• 75/65/50/50/50 mA at max cycle rate
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
SJ: 300 mil, 28-pin SOJ package
TS: 8 mm x 13.4 mm, 28-pin TSOP Type I package
Pin Descriptions
Symbol
A0–A14
DQ1–DQ8
CE
WE
Description
The GS70328 is a high speed CMOS static RAM organized as
32,763 words by 8 bits. Static design eliminates the need for
external clocks or timing strobes. The GS70328 operates on a
single 3.3 V power supply, and all inputs and outputs are TTL-
compatible. The GS70328 is available in 300 mil, 28-pin SOJ
and 8 x 13.4 mm2, 28-pin TSOP Type-I packages.
OE
VDD
VSS
NC
Pin Configuration
Top view
A14 1
A12 2
28 VDD
27 WE
A7 3
26 A13
A6 4
25
A5 5
24
A4 6 28-pin 23
A3 7
22
300 mil
A2 8
21
A1 9 SOJ 20
A0 10
19
DQ1 11
18
DQ2 12
17
A8
A9
A11
OE
A10
CE
DQ8
DQ7
DQ6
OE 1
A11 2
A9 3
A8 4
A13 5
WE 6
VDD 7
A14 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
DQ3 13
16 DQ5
VSS 14
15 DQ4
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
28- pin
8 x 13.4 TSOP I
28 A10
27 CE
26 DQ8
25 DQ7
24 DQ6
23 DQ5
22 DQ4
21 VSS
20 DQ3
19 DQ2
18 DQ1
17 A0
16 A1
15 A2
Rev: 1.10 10/2002
1/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.

1 Page





GS70328SJ-8I pdf, ピン配列
GS70328SJ/TS
Recommended Operating Conditions
Parameter
Supply Voltage for -7/8/10/12
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
VDD
VIH
VIL
TAc
TAI
Minimum
3.0
2.0
–0.3
0
–40
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Typical
3.3
Maximum
3.6
VDD + 0.3
0.8
70
85
Capacitance
Parameter
Symbol
Input Capacitance
Output Capacitance
CIN
COUT
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Test Condition
VIN = 0 V
VOUT = 0 V
Maximum
5
7
DC I/O Pin Characteristics
Parameter
Symbol
Input Leakage Current
IIL
Output Leakage Current
ILO
Output High Voltage
Output Low Voltage
VOH
VOL
Test Conditions
VIN = 0 to VDD
Output High Z
VOUT = 0 to VDD
IOH = –4 mA
ILO = +4 mA
Min
–1uA
–1uA
2.4 V
Unit
V
V
V
oC
oC
Unit
pF
pF
Max
1uA
1uA
0.4 V
Rev: 1.10 10/2002
3/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.


3Pages


GS70328SJ-8I 電子部品, 半導体
Read Cycle 1: CE = OE = VIL, WE = VIH
Address
Data Out
tOH
Previous Data
tRC
tAA
Read Cycle 2: WE = VIH
Address
CE
OE
Data Out
tRC
tAA
tAC
tLZ
tOLZ
High impedance
tOE
Data valid
tHZ
tOHZ
DATA VALID
GS70328SJ/TS
Rev: 1.10 10/2002
6/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.

6 Page



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部品番号部品説明メーカ
GS70328SJ-8

32K x 8 256Kb Asynchronous SRAM

ETC
ETC
GS70328SJ-8I

32K x 8 256Kb Asynchronous SRAM

ETC
ETC


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