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PDF GP800NSM33 Data sheet ( Hoja de datos )
| Número de pieza | GP800NSM33 | |
| Descripción | Hi-Reliability Single Switch IGBT Module Preliminary Information | |
| Fabricantes | Dynex Semiconductor | |
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GP800NSM33
GP800NSM33
Hi-Reliability Single Switch IGBT Module
Preliminary Information
DS5372-2.0 February 2001
FEATURES
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
s 3300V Rating
s 800A Per Module
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP800NSM33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800NSM33
Note: When ordering, please use the complete part number.
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.4V
800A
1600A
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
C1
E1
E2
G
E2
C1
C2
E2 - Aux Emitter
C1 - Aux Collector
Outline type code: N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP800NSM33
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
1600
1400
1200
1000
Tj = 25˚C
Tj = 125˚C
800
600
400
200
0
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig.5 Diode typical forward characteristics
1800
1600
1400
1200
1000
800
600
400 Tcase = 125˚C
Vge = ±15V
200
Rg(ON) = 3.3Ω
Rg(OFF) = 6.8Ω
CGE = 440nF
0
0 500 1000
1500
2000
2500
3000
Collector-emitter voltage, Vce - (V)
3500
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| PDF Descargar | [ Datasheet GP800NSM33.PDF ] | |
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