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GP800DDM12 の電気的特性と機能

GP800DDM12のメーカーはDynex Semiconductorです、この部品の機能は「Hi-Reliability Dual Switch IGBT Module Advance Information」です。


製品の詳細 ( Datasheet PDF )

部品番号 GP800DDM12
部品説明 Hi-Reliability Dual Switch IGBT Module Advance Information
メーカ Dynex Semiconductor
ロゴ Dynex Semiconductor ロゴ 




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GP800DDM12 Datasheet, GP800DDM12 PDF,ピン配置, 機能
GP800DDM12
Replaces May 2000 version, DS5291-1.3
FEATURES
s High Thermal Cycling Capability
s 800A Per Switch
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
GP800DDM12
Hi-Reliability Dual Switch IGBT Module
Advance Information
DS5291-2.0 October 2000
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
2.7V
800A
1600A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP800DDM12 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800DDM12
Note: When ordering, please use the whole part number.
12(C2)
2(C2)
7(C1)
4(E2)
1(E1)
11(G2)
10(E2)
3(C1)
5(E1)
6(G1)
Fig. 1 Dual switch circuit diagram
5
6
7
8
3
9
12
11
10
4
1
2
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/11

1 Page





GP800DDM12 pdf, ピン配列
GP800DDM12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
ICES Collector cut-off current
IGES
V
GE(TH)
VCE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF Diode forward current
I Diode maximum forward current
FM
VF Diode forward voltage
C Input capacitance
ies
LM Module inductance
Test Conditions
VGE = 0V, VCE = VCES
V = 0V, V = V , T = 125˚C
GE CE CES case
VGE = ±20V, VCE = 0V
IC = 120mA, VGE = VCE
VGE = 15V, IC = 800A
V = 15V, I = 800A, , T = 125˚C
GE C
case
DC, Tcase = 50˚C
tp = 1ms
IF = 800A
IF = 800A, Tcase = 125˚C
V = 25V, V = 0V, f = 1MHz
CE GE
-
Min. Typ. Max. Units
- - 1 mA
- - 50 mA
- - ±4 µA
4 - 7.5 V
- 2.7 3.5 V
- 3.2 4 V
- - 800 A
- - 1600 A
- 2.2 2.4 V
- 2.3 2.5 V
- 90 - nF
- 20 - nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/11


3Pages


GP800DDM12 電子部品, 半導体
GP800DDM12
180
Conditions:
160
Tcase = 25˚C,
VCE = 600V,
VGE = ±15V
140
120
100
A
B
C
80
60
40
A : Rg = 6.8
20 B : Rg = 4.7
C : Rg = 3.3
0
0 100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig.7 Typical turn-off energy vs collector current
250
Conditions:
Tcase = 125˚C,
VCE = 600V,
200 VGE = ±15V
150
100
A
B
C
50
A : Rg = 6.8
B : Rg = 4.7
C : Rg = 3.3
0
0 100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig.8 Typical turn-off energy vs collector current
70
Conditions:
VCE = 600V,
60
VGE = 15V,
Rg = 3.3
50
Tcase = 125˚C
40
30 Tcase = 25˚C
20
10
0
0 200 400 600 800
Collector current, IC (A)
Fig.9 Typical diode reverse recovery charge vs collector current
2000
1800
1600
1400
td(off)
tf
Conditions:
Tcase = 125˚C,
VCE = 600V
VGE = 15V
Rg = 3.3
1200
1000
800
td(on)
600
400
200
0
0
tr
100 200 300 400 500 600 700 800
Collector currrent, IC - (A)
Fig.10 Typical switching characteristics
6/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

6 Page



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共有リンク

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部品番号部品説明メーカ
GP800DDM12

Hi-Reliability Dual Switch IGBT Module Advance Information

Dynex Semiconductor
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