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PDF GP400LSS12 Data sheet ( Hoja de datos )
| Número de pieza | GP400LSS12 | |
| Descripción | Single Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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GP400LSS12
Replaces February 2000 version, DS5306-1.2
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 1200V Rating
s 400A Per Module
GP400LSS12
Single Switch IGBT Module
DS5306-2.3 November 2000
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
2.7V
400A
800A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.
The GP400LSS12 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP400LSS12
Note: When ordering, please use the compete part number.
2(E)
5(E1)
3(G1)
1(C)
4(C1)
Fig. 1 Single switch circuit diagram
4
52
3
1
Outline type code: L
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1 page  
GP400LSS12
TYPICAL CHARACTERISTICS
800
Common emitter
Tcase = 25˚C
700
Vge = 20/15/12/10V
600
500
400
300
200
100
0
0 1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
5.0
800
Common emitter
Tcase = 125˚C
700
Vge = 20/15/12/10V
600
500
400
300
200
100
0
0 1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
5.0
80
Conditions:
Tcase = 125˚C,
70 VCE = 600V,
VGE = ±15V
60
50
A
B
C
40
30
20
10
0
50
A : Rg = 6.2Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
100 150 200 250 300 350 400 450
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
90
Conditions:
80
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
70
AB
C
60
50
40
30
20
A : Rg = 6.2Ω
10 B : Rg = 4.7Ω
C : Rg = 3.3Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GP400LSS12.PDF ] | |
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