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Datasheet GP400DDM12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GP400DDM12 | Dual Switch IGBT Module Advance Information GP400DDM12
GP400DDM12
Dual Switch IGBT Module Advance Information
DS5503-1.0 October 2001
FEATURES
s s s s
High Thermal Cycling Capability 400A Per Switch Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 400A 800 |  Dynex Semiconductor | igbt |
GP4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GP400 | 4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPPD-400-1B
4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES
FEATURES MECHANICAL SPECIFICATION
R
½¬¾À¿HÁ°½{ÂÄÃÅ Æ°ÇÉÈËÊ ÌÀÈËÍ Î�  DIOTEC diode | | |
| 2 | GP400DDM12 | Dual Switch IGBT Module Advance Information GP400DDM12
GP400DDM12
Dual Switch IGBT Module Advance Information
DS5503-1.0 October 2001
FEATURES
s s s s
High Thermal Cycling Capability 400A Per Switch Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 400A 800 Dynex Semiconductor igbt | | |
| 3 | GP400DDS12 | Powerline N-Channel Dual Switch IGBT Module Dynex Semiconductor igbt | | |
| 4 | GP400DDS18 | Dual Switch IGBT Module Preliminary Information GP400DDS18
GP400DDS18
Dual Switch IGBT Module Preliminary Information
DS5359-2.0 January 2001
FEATURES
s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 400A 1600A
APPLICATIONS
s s Dynex Semiconductor igbt | | |
| 5 | GP400LSS12 | Single Switch IGBT Module GP400LSS12
GP400LSS12
Single Switch IGBT Module
Replaces February 2000 version, DS5306-1.2 DS5306-2.3 November 2000
FEATURES
s s s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200V Rating 400A Per Module
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC Dynex Semiconductor igbt | | |
| 6 | GP400LSS18 | Single Switch IGBT Module GP400LSS18
GP400LSS18
Single Switch IGBT Module
DS5305-2.0 November 2000
FEATURES
s s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 400A Per Module
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 400A 800A
APPLICATIONS
s s s s
Dynex Semiconductor igbt | | |
| 7 | GP401 | 4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPPD-400-1B
4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES
FEATURES MECHANICAL SPECIFICATION
R
½¬¾À¿HÁ°½{ÂÄÃÅ Æ°ÇÉÈËÊ ÌÀÈËÍ Î� DIOTEC diode | |
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