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GP2400ESM12 の電気的特性と機能

GP2400ESM12のメーカーはDynex Semiconductorです、この部品の機能は「Powerline N-Channel Single Switch IGBT Module Preliminary Information」です。


製品の詳細 ( Datasheet PDF )

部品番号 GP2400ESM12
部品説明 Powerline N-Channel Single Switch IGBT Module Preliminary Information
メーカ Dynex Semiconductor
ロゴ Dynex Semiconductor ロゴ 




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GP2400ESM12 Datasheet, GP2400ESM12 PDF,ピン配置, 機能
GP2400ESM12
GP2400ESM12
Powerline N-Channel Single Switch IGBT Module
Preliminary Information
DS5360-1.1 May 2000
The GP2400ESM12 is a single switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
VCES
VCE(sat)
IC
IC(PK)
KEY PARAMETERS
1200V
(typ) 2.7V
(max)
2400A
(max)
4800A
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
This device is optimised for traction drives and other
applications requiring high thermal cycling capability.
Outline type code: E
FEATURES
s n - Channel Enhancement Mode
s Non Punch Through Silicon
s High Gate Input Impedance
s Optimised For High Power High Frequency Operation
s Isolated MMC Base with AlN
s 1200V Rating
s 2400A Per Module
APPLICATIONS
s High Power Switching
s Motor Control
s Inverters
s Traction Drives
(See package details for further information)
Fig. 1 Electrical connections - (not to scale)
Aux C
External connection
C1 C2
C3
G
Aux E
E1 E2
External connection
E3
Fig.2 Single switch circuit diagram
ORDERING INFORMATION
Order As: GP2400ESM12
Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/12

1 Page





GP2400ESM12 pdf, ピン配列
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
ICES Collector cut-off current
IGES
V
GE(TH)
VCE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF Diode forward current
I Diode maximum forward current
FM
VF Diode forward voltage
C Input capacitance
ies
LM Module inductance
GP2400ESM12
Test Conditions
Min. Typ. Max. Units
VGE = 0V, VCE = VCES
V = 0V, V = V , T = 125˚C
GE CE CES case
VGE = ±20V, VCE = 0V
IC = 120mA, VGE = VCE
VGE = 15V, IC = 2400A
VGE
=
15V,
I
C
=
2400A,
,
T
case
=
125˚C
DC, Tcase = 50˚C, Tj = 125˚C
tp = 1ms, Tj = 125˚C
IF = 2400A
IF = 2400A, Tcase = 125˚C
V = 25V, V = 0V, f = 1MHz
CE GE
-
-
-
-
4
-
-
-
-
-
-
-
-
- 3 mA
- 100 mA
- 12 µA
- 7.5 V
2.7 3.5 V
3.2 4.0 V
- 2400 A
- 4800 A
2.2 2.4 V
2.3 2.5 V
270 - nF
10 - nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/12


3Pages


GP2400ESM12 電子部品, 半導体
GP2400ESM12
TYPICAL CHARACTERISTICS
4800
4200
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Fig.5 Typical output characteristics
4800
4200
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Fig.6 Typical output characteristics
1000
900
800
Conditions:
Tcase = 25˚C
Vce = 600V
Vge = 15V
700
Rg = 7
600
Rg = 4.3
500
400
Rg = 3.3
300
200
100
0
0 400 800 1200 1600 2000 2400
Collector current, IC - (A)
Fig.7 Typical turn-on energy vs collector current
1200
1000
Conditions:
Tcase = 125˚C
Vce = 600V
Vge = 15V
800
600
400
A
B
C
200
0
0
A: Rg = 7
B: Rg = 4.3
C: Rg = 3.3
400 800 1200 1600 2000 2400
Collector current, IC - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
6/12

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
GP2400ESM12

Powerline N-Channel Single Switch IGBT Module Preliminary Information

Dynex Semiconductor
Dynex Semiconductor
GP2400ESM18

Hi-Reliability Single Switch IGBT Module

Dynex Semiconductor
Dynex Semiconductor


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