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PDF GP201MHS18 Data sheet ( Hoja de datos )
| Número de pieza | GP201MHS18 | |
| Descripción | Low VCE(SAT) Half Bridge IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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GP201MHS18
FEATURES
s Low VCE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 200A Per Arm
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
GP201MHS18
Low VCE(SAT) Half Bridge IGBT Module
DS5290-2.1 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
2.6V
200A
400A
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP201MHS18 is a half bridge 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP201MHS18
Note: When ordering, please use the complete part number.
Fig. 1 Half bridge circuit diagram
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP201MHS18
TYPICAL CHARACTERISTICS
400
Common emitter
Tcase = 25˚C
350
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
400
Common emitter
Tcase = 125˚C
350
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
180
Tcase = 125˚C
160
VGE = ±15V
VCE = 900V
140
120
A
B
100 C
80
60
40
A: Rg = 10Ω
20 B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
160
Tcase = 125˚C
VGE = ±15V
140 VCE = 900V
120
100
A
B
C
80
60
40
20
A: Rg = 10Ω
B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GP201MHS18.PDF ] | |
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