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PDF GP200MHS12 Data sheet ( Hoja de datos )
| Número de pieza | GP200MHS12 | |
| Descripción | Half Bridge IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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GP200MHS12
GP200MHS12
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
DS5296-1.5 November 2000
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
2.7V
200A
400A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.
The GP200MHS12 is a half bridge 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
GP200MHS12
Note: When ordering, please use the whole part number.
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP200MHS12
TYPICAL CHARACTERISTICS
400
Common emitter
350 Tcase = 25˚C
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
5.0
400
Common emitter
Tcase = 125˚C
350
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
5.0
60
Tj = 125˚C
VGE = ±15V
50 VCE = 600V
40
30
A
B
C
20
10 A: Rg = 10Ω
B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0 50 100 150 200
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
50
Tj = 125˚C
45 VGE = ±15V
VCE = 600V
40
35
A
B
C
30
25
20
15
10
A: Rg = 10Ω
5 B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0 50 100 150 200
Collector current, IC - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GP200MHS12.PDF ] | |
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