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GP1201FSS18 の電気的特性と機能

GP1201FSS18のメーカーはDynex Semiconductorです、この部品の機能は「Single Switch Low V IGBT Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 GP1201FSS18
部品説明 Single Switch Low V IGBT Module
メーカ Dynex Semiconductor
ロゴ Dynex Semiconductor ロゴ 




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GP1201FSS18 Datasheet, GP1201FSS18 PDF,ピン配置, 機能
GP1201FSS18
GP1201FSS18
Single Switch Low VCE(SAT) IGBT Module
FEATURES
s Low VCE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 1200A Per Module
DS5411-1.1 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
1200A
2400A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1201FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1201FSS18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
Aux E
E1
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9

1 Page





GP1201FSS18 pdf, ピン配列
GP1201FSS18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
ICES Collector cut-off current
IGES
V
GE(TH)
V
CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF Diode forward current
I Diode maximum forward current
FM
V Diode forward voltage
F
Cies Input capacitance
LM Module inductance
Test Conditions
V = 0V, V = V
GE CE CES
V = 0V, V = V , T = 125˚C
GE CE CES case
VGE = ±20V, VCE = 0V
IC = 60mA, VGE = VCE
VGE = 15V, IC = 1200A
VGE = 15V, IC = 1200A, Tcase = 125˚C
DC
tp = 1ms
IF = 1200A
IF = 1200A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
Min. Typ. Max. Units
- - 1 mA
- - 25 mA
- - 4 µA
4.5 5.5 6.5 V
- 2.6 3.2 V
- 3.3 4 V
- - 1200 A
- - 2400 A
- 2.2 2.5 V
- 2.3 2.6 V
- 135 - nF
- 20 - nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/9


3Pages


GP1201FSS18 電子部品, 半導体
GP1201FSS18
2400
2200
2000
1800
Tj = 25˚C
1600
1400
1200
Tj = 125˚C
1000
800
600
400
200
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
3000
2500
2000
1500
1000
Tcase = 125˚C
500 Vge = ±15V
Rg(off) = 2.2Ω
0
0 400 800 1200 1600
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
2000
100
Diode
10 Transistor
1
0.1
1
10 100 1000
Pulse width, tp - (ms)
Fig. 9 Transient thermal impedance
10000
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

6 Page



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部品番号部品説明メーカ
GP1201FSS18

Single Switch Low V IGBT Module

Dynex Semiconductor
Dynex Semiconductor


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