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PDF GP1200FSM18 Data sheet ( Hoja de datos )
| Número de pieza | GP1200FSM18 | |
| Descripción | Hi-Reliability Single Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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GP1200FSM18
FEATURES
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
s 1200A Per Module
GP1200FSM18
Hi-Reliability Single Switch IGBT Module
DS5410-1.2 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
3.5V
1200A
2400A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1200FSM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1200FSM18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
Aux E
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP1200FSM18
TYPICAL CHARACTERISTICS
2400
Common emitter
2200 Tcase = 25˚C
2000
Vge = 20/15/12V
1800
1600
1400
Vge = 10V
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
2400
Common emitter
2200 Tcase = 125˚C
2000
Vge = 20/15/12V
1800
1600
Vge = 10V
1400
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
1.0
Tcase = 125˚C
0.9 VGE = 15V
VCE = 900V
0.8
RG = 2.2Ω
L = 50nH
0.7
0.6
0.5 EOFF
0.4
0.3
0.2
0.1
0
0
200 400 600
800
Collector current, IC - (A)
EON
EREC
1000 1200
Fig. 5 Typical switching energy vs collector current
2.00
1.75
1.50
Tcase = 125˚C
VGE = 15V
VCE = 900V
IC = 1200A
L = 50nH
EON
1.25
1.00
EOFF
0.75
0.50
0.25
EREC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, RG - (Ohms)
Fig. 6 Typicalswitching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GP1200FSM18.PDF ] | |
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