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GM76U256CLLのメーカーはHynix Semiconductorです、この部品の機能は「32K x8 bit 3.0V Low Power CMOS slow SRAM」です。 |
部品番号 | GM76U256CLL |
| |
部品説明 | 32K x8 bit 3.0V Low Power CMOS slow SRAM | ||
メーカ | Hynix Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとGM76U256CLLダウンロード(pdfファイル)リンクがあります。 Total 11 pages
Document Title
32K x8 bit 3.0V Low Power CMOS slow SRAM
Revision History
Revision No History
00 Revision History Insert
Revised
- Datasheet format change
- PDIP package type insert
- Pin configuration change
01 Marking Information Add
Revised
- AC Test Condition Add : 5pF Test Load
02 Changed Logo
- HYUNDAI -> hynix
GM76U256C Series
32Kx8bit CMOS SRAM
Draft Date
Jul.08.2000
Remark
Final
Dec.04.2000 Final
Apr.30.2001 Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 02 / Apr. 2001
Hynix Semiconductor
1 Page GM76U256C Series
ORDERING INFORMATION
Part No.
GM76U256CL
GM76U256CLL
GM76U256CLE
GM76U256CLLE
GM76U256CLFW
GM76U256CLLFW
GM76U256CLEFW
GM76U256CLLEFW
GM76U256CLT
GM76U256CLLT
GM76U256CLET
GM76U256CLLET
Speed
100/120
100/120
100/120
100/120
100/120
100/120
100/120
100/120
100/120
100/120
100/120
100/120
Power
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
Temp
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
Package
PDIP
PDIP
PDIP
PDIP
SOP
SOP
SOP
SOP
TSOP-I Standard
TSOP-I Standard
TSOP-I Standard
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Vcc, VIN, VOUT Power Supply, Input/Output Voltage
-0.3 to 4.6
V
TA
Operating Temperature GM76U256C
0 to 70
°C
GM76U256CE
-25 to 85
°C
TSTG
Storage Temperature
-65 to 150
°C
PD Power Dissipation
1.0 W
IOUT
Data Output Current
50 mA
TSOLDER
Lead Soldering Temperature & Time
260 •10
°C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Parameter
Min.
Vcc
Power Supply Voltage
2.7
Vss Ground
0
VIH Input High Voltage
2.2
VIL
Input Low Voltage
-0.3(1)
Note
1. VIL = -3.0V for pulse width less than 50ns
Typ.
3.0
0
-
-
Max.
3.3
0
Vcc+0.3
0.4
TRUTH TABLE
/CS /WE /OE
Mode
H X X Standby
L H H Output Disabled
L H L Read
L L X Write
Note
1. H=VIH, L=VIL, X=Don't Care
I/O Operation
High-Z
High-Z
Data Out
Data In
Unit
V
V
V
V
Rev 02 / Apr. 2001
2
3Pages TIMING DIAGRAM
READ CYCLE 1
ADDR
OE
CS
Data
Out
High-Z
tRC
tAA
tOE
tOLZ
tACS
tCLZ
GM76U256C Series
tOH
tOHZ
tCHZ
Data Valid
Note(READ CYCLE):
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and arenot
referenced to output voltage levels.
2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device
and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
ADDR
Data
Out
tAA
tOH
Previous Data
tRC
Data Valid
tOH
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS= VIL.
3. /OE =VIL.
Rev 02 / Apr. 2001
5
6 Page | |||
ページ | 合計 : 11 ページ | ||
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PDF ダウンロード | [ GM76U256CLL データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GM76U256CL | 32K x8 bit 3.0V Low Power CMOS slow SRAM | Hynix Semiconductor |
GM76U256CLE | 32K x8 bit 3.0V Low Power CMOS slow SRAM | Hynix Semiconductor |
GM76U256CLEFW | 32K x8 bit 3.0V Low Power CMOS slow SRAM | Hynix Semiconductor |
GM76U256CLET | 32K x8 bit 3.0V Low Power CMOS slow SRAM | Hynix Semiconductor |