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STU11N65M5 の電気的特性と機能

STU11N65M5のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STU11N65M5
部品説明 N-channel Power MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STU11N65M5 Datasheet, STU11N65M5 PDF,ピン配置, 機能
STB11N65M5, STD11N65M5, STF11N65M5,
STP11N65M5, STU11N65M5
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET
in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.48 Ω 9 A
Worldwide best RDS(on) * area
Higher VDSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
Applications
Switching applications
TAB
TAB
2
3
1
D2PAK
23
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
Marking
11N65M5
'
3
!-V
Package
D2PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 022864 Rev 2
1/25
www.st.com
25

1 Page





STU11N65M5 pdf, ピン配列
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. ISD 9 A, di/dt 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
Value
D2PAK
DPAK
TO-220
IPAK
TO-220FP
± 25
9 9 (1)
5.6 5.6 (1)
36 36 (1)
85 25
15
Unit
V
A
A
A
W
V/ns
2500
V
- 55 to 150
150
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D2PAK DPAK TO-220FP TO-220 IPAK
Rthj-case
Thermal resistance junction-case
max
Rthj-pcb(1)
Thermal resistance junction-pcb
max
Rthj-amb
Thermal resistance junction-
ambient max
1.47
30 50
5.0 1.47 °C/W
°C/W
62.5 100 °C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
EAS
Single pulse avalanche energy (starting tj=25°C,
Id= IAR; Vdd=50)
Value
2
130
Unit
A
mJ
Doc ID 022864 Rev 2
3/25


3Pages


STU11N65M5 電子部品, 半導体
Electrical characteristics STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
2.1 Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area for DPAK and Figure 3.
IPAK
AM15398v1
Thermal impedance DPAK and IPAK
10
1
0.1
0.01
0.1
Tj=150°C
Tc=25°C
Single
pulse
1 10
10µs
100µs
1ms
10ms
100 VDS(V)
Figure 4.
ID
(A)
Safe operating area for TO-220FP Figure 5.
AM15399v1
Thermal impedance for TO-220FP
10
1
0.1
0.01
0.1
Tj=150°C
Tc=25°C
Single
pulse
1 10
10µs
100µs
1ms
10ms
100 VDS(V)
Figure 6.
ID
(A)
Safe operating area for TO-220 and Figure 7.
D2PAK
AM15400v1
Thermal impedance for TO-220 and
D2PAK
10
1
0.1
0.01
0.1
Tj=150°C
Tc=25°C
Single
pulse
1 10
10µs
100µs
1ms
10ms
100 VDS(V)
6/25 Doc ID 022864 Rev 2

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
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N-channel Power MOSFET

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STU11N65M5

N-channel Power MOSFET

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