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STU11N65M2のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | STU11N65M2 |
| |
部品説明 | N-channel Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTU11N65M2ダウンロード(pdfファイル)リンクがあります。 Total 21 pages
STD11N65M2, STP11N65M2,
STU11N65M2
N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet - preliminary data
TAB
3
1
DPAK
TAB
TAB
3
2
1
TO-220
IPAK
3
2
1
Figure 1. Internal schematic diagram
'7$%
Features
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
VDS
RDS(on) max ID
650 V
0.67 Ω
7A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
*
6
AM01476v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
Table 1. Device summary
Marking
Package
11N65M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
May 2014
DocID026376 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/21
www.st.com
1 Page STD11N65M2, STP11N65M2, STU11N65M2
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS
(1)
ID
(1)
ID
(2)
IDM
(1)
PTOT
(3)
dv/dt
(4)
dv/dt
Gate-source voltage
Drain current (continuous) at Tc = 25 °C
Drain current (continuous) at Tc = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
(starting Tj = 25 °C, ID= IAS, VDD = 50 V)
MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by Tjmax
3. ISD ≤ 7 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=80% V(BR)DSS.
4. VDS ≤ 520 V
± 25
7
4.4
28
85
15
50
2500
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4 board, 2 oz Cu
DPAK
50
Value
TO-220
1.47
62.5
IPAK
100
Unit
°C/W
°C/W
°C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not
IAR repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
EAS Tj=25°C, ID= IAR; VDD=50)
1.5
110
Unit
A
mJ
DocID026376 Rev 1
3/21
21
3Pages Electrical characteristics
STD11N65M2, STP11N65M2, STU11N65M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
IPAK
ID GIPG120520141711SA
(A)
Figure 3. Thermal impedance for DPAK and
IPAK
10
1
0.1
0.01
0.1
OpeLriamtiiotendinbythmisaaxreRaDSis(on)
10µs
100µs
1ms
10ms
TC=150°C
Tamb=25°C
Single pulse
1 10 100 VDS(V)
Figure 4. Safe operating area for TO-220
ID GIPG120520141723SA
(A)
Figure 5. Thermal impedance for TO-220
10
1
OpeLriamtiiotendinbythmisaaxreRaDSis(on)
10µs
100µs
1ms
10ms
0.1
0.01
0.1
1
TC=150°C
Tamb=25°C
Single pulse
10 100 VDS(V)
Figure 6. Output characteristics
ID GIPD241020131645FSR
(A) VGS= 8, 9, 10V
14
12 7V
10 6V
8
6
4
5V
2
0
0 5 10 15 20 VDS(V)
Figure 7. Transfer characteristics
ID(A)
GIPD241020131653FSR
14
VDS=19V
12
10
8
6
4
2
0
0 2 4 6 8 10 VGS(V)
6/21 DocID026376 Rev 1
6 Page | |||
ページ | 合計 : 21 ページ | ||
|
PDF ダウンロード | [ STU11N65M2 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STU11N65M2 | N-channel Power MOSFET | STMicroelectronics |
STU11N65M5 | N-channel Power MOSFET | STMicroelectronics |