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STU11N65M2 の電気的特性と機能

STU11N65M2のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STU11N65M2
部品説明 N-channel Power MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STU11N65M2 Datasheet, STU11N65M2 PDF,ピン配置, 機能
STD11N65M2, STP11N65M2,
STU11N65M2
N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet - preliminary data
TAB
3
1
DPAK
TAB
TAB
3
2
1
TO-220
IPAK
3
2
1
Figure 1. Internal schematic diagram
' 7$%
Features
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
VDS
RDS(on) max ID
650 V
0.67 Ω
7A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
* 
6 
AM01476v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
Table 1. Device summary
Marking
Package
11N65M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
May 2014
DocID026376 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/21
www.st.com

1 Page





STU11N65M2 pdf, ピン配列
STD11N65M2, STP11N65M2, STU11N65M2
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS
(1)
ID
(1)
ID
(2)
IDM
(1)
PTOT
(3)
dv/dt
(4)
dv/dt
Gate-source voltage
Drain current (continuous) at Tc = 25 °C
Drain current (continuous) at Tc = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
(starting Tj = 25 °C, ID= IAS, VDD = 50 V)
MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by Tjmax
3. ISD 7 A, di/dt 400 A/μs; VDS peak < V(BR)DSS, VDD=80% V(BR)DSS.
4. VDS 520 V
± 25
7
4.4
28
85
15
50
2500
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4 board, 2 oz Cu
DPAK
50
Value
TO-220
1.47
62.5
IPAK
100
Unit
°C/W
°C/W
°C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not
IAR repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
EAS Tj=25°C, ID= IAR; VDD=50)
1.5
110
Unit
A
mJ
DocID026376 Rev 1
3/21
21


3Pages


STU11N65M2 電子部品, 半導体
Electrical characteristics
STD11N65M2, STP11N65M2, STU11N65M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
IPAK
ID GIPG120520141711SA
(A)
Figure 3. Thermal impedance for DPAK and
IPAK
10
1
0.1
0.01
0.1
OpeLriamtiiotendinbythmisaaxreRaDSis(on)
10µs
100µs
1ms
10ms
TC=150°C
Tamb=25°C
Single pulse
1 10 100 VDS(V)
Figure 4. Safe operating area for TO-220
ID GIPG120520141723SA
(A)
Figure 5. Thermal impedance for TO-220
10
1
OpeLriamtiiotendinbythmisaaxreRaDSis(on)
10µs
100µs
1ms
10ms
0.1
0.01
0.1
1
TC=150°C
Tamb=25°C
Single pulse
10 100 VDS(V)
Figure 6. Output characteristics
ID GIPD241020131645FSR
(A) VGS= 8, 9, 10V
14
12 7V
10 6V
8
6
4
5V
2
0
0 5 10 15 20 VDS(V)
Figure 7. Transfer characteristics
ID(A)
GIPD241020131653FSR
14
VDS=19V
12
10
8
6
4
2
0
0 2 4 6 8 10 VGS(V)
6/21 DocID026376 Rev 1

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
STU11N65M2

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics
STU11N65M5

N-channel Power MOSFET

STMicroelectronics
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