DataSheet.jp

GT8G131 の電気的特性と機能

GT8G131のメーカーはToshiba Semiconductorです、この部品の機能は「N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)」です。


製品の詳細 ( Datasheet PDF )

部品番号 GT8G131
部品説明 N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




このページの下部にプレビューとGT8G131ダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

GT8G131 Datasheet, GT8G131 PDF,ピン配置, 機能
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G131
GT8G131
Strobe Flash Applications
Unit: mm
· Supplied in Compact and Thin Package Requires Only a Small
Mounting Area
· 4th generation (trench gate structure) IGBT
· Enhancement-mode
· 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
· Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 400 V
Gate-emitter voltage
DC VGES
±6
V
Pulse
VGES
±8
Collector current
DC
1 ms
IC
ICP
8
A
150
Collector power dissipation (Note 1)
PC
1.1 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
-55~150
°C
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 ´ 1.5 t]
JEDEC
JEITA
TOSHIBA
2-6J1C
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/ms.
1234
1 2003-03-18

1 Page





GT8G131 pdf, ピン配列
200
Common emitter
Tc = -40°C
160
IC – VCE
4.5 V
VGE = 5 V
3.5 V
4.0 V
3.0 V
120
80 2.5 V
40
0
012345
Collector-emitter voltage VCE (V)
GT8G131
IC – VCE
200
Common emitter
Tc = 25°C
160
4.5 V
VGE = 5 V
120
4.0 V
3.5 V
3.0 V
80
2.5 V
40
0
012345
Collector-emitter voltage VCE (V)
200
Common emitter
Tc = 70°C
160
IC – VCE
4.5 V
VGE = 5 V
120
80
40
4.0 V
3.5 V
3.0 V
2.5 V
0
012345
Collector-emitter voltage VCE (V)
200
Common emitter
Tc = 125°C
160
IC – VCE
4.5 V
VGE = 5 V
120
80
40
4.0 V
3.5 V
3.0 V
2.5 V
0
012345
Collector-emitter voltage VCE (V)
200
Common emitter
VCE = 5 V
160
IC – VGE
25°C
70°C
-40°C
120
Tc = 125°C
80
40
0
012345
Gate-emitter voltage VGE (V)
5
Common emitter
VGE = 4 V
4
VCE (sat) – Tc
3
2
1
IC = 150 A
120 A
90 A
60 A
0
-80 -40
0
40 80 120 160
Case temperature Tc (°C)
3 2003-03-18


3Pages


GT8G131 電子部品, 半導体
GT8G131
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6 2003-03-18

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ GT8G131 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
GT8G131

N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
GT8G132

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Toshiba Semiconductor
Toshiba Semiconductor
GT8G133

Insulated Gate Bipolar Transistor

Toshiba Semiconductor
Toshiba Semiconductor
GT8G134

Insulated Gate Bipolar Transistor

Toshiba Semiconductor
Toshiba Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap