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FQA13N50CFのメーカーはFairchild Semiconductorです、この部品の機能は「500V N-Channel MOSFET」です。 |
部品番号 | FQA13N50CF |
| |
部品説明 | 500V N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFQA13N50CFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
FQA13N50CF
500V N-Channel MOSFET
Features
• 15A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge (typical 43nC)
• Low Crss (typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
• RoHS compliant
July 2007
FRFET®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-3P
FQA Series
G
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
S
FQA13N50CF
500
15
9.5
60
± 30
860
15
21.8
4.5
218
1.56
-55 to +150
300
Typ
--
0.24
--
Max
0.58
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA13N50CF Rev. A1
1
www.fairchildsemi.com
1 Page Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
101 6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
Notes :
1. 250us Pulse Test
2. T = 25°C
C
100 101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150°C
25°C
100
-55°C
10-1
2
Notes :
1. V = 40V
DS
2. 250µs Pulse Test
468
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
1.5
V = 10V
GS
1.0
0.5
0
V = 20V
GS
Note : T = 25°C
J
5 10 15 20 25 30 35
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
3000
2500
2000
1500
1000
500
0
10-1
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
Notes ;
1. V = 0 V
GS
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
101
100
10-1
0.2
150°C
25°C
Notes :
1. V = 0V
GS
2. 250µs Pulse Test
0.4 0.6 0.8 1.0 1.2
V , Source-Drain voltage [V]
SD
1.4
Figure 6. Gate Charge Characteristics
12
V = 100V
DS
10
V = 250V
DS
V = 400V
8 DS
6
4
2
Note : I = 15A
D
0
0 10 20 30 40 50
Q , Total Gate Charge [nC]
G
FQA13N50CF Rev. A1
3
www.fairchildsemi.com
3Pages Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQA13N50CF Rev. A1
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
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部品番号 | 部品説明 | メーカ |
FQA13N50C | 500V N-Channel MOSFET | Fairchild Semiconductor |
FQA13N50CF | 500V N-Channel MOSFET | Fairchild Semiconductor |