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PDF GT60N321 Data sheet ( Hoja de datos )
| Número de pieza | GT60N321 | |
| Descripción | High Power Switching Applications The 4th Generation | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High Power Switching Applications
The 4th Generation
Unit: mm
· FRD included between emitter and collector
· Enhancement-mode
· High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A)
FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs)
· Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1 ms
Emitter-Collector
Forward Current
DC
1 ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
symbol
VCES
VGES
IC
ICP
IECF
IECFP
PC
Tj
Tstg
¾
Rating
1000
±25
60
120
15
120
170
150
-55~150
0.8
Equivalent Circuit
Collector
Unit
V
V
A
A
W
°C
°C
N･m
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Gate
Emitter
1 2002-01-18
1 page  
103 Rth (t) – tw
Tc = 25°C
102
101
100
10-1
Diode Stage
IGBT Stage
10-2
10-130-5 10-4 10-3 10-2
10-1
100
101
102
Pulse width tw (s)
Irr, trr – IECF
10 2
Common emitter
di/dt = -20 A/ms
9
Tc = 25°C
1.6
8 1.2
trr
Irr
7 0.8
6 0.4
50
0 20 40 60 80 100
Emitter-collector forward current IECF (A)
GT60N321
100
Common
コレcoクlleタcto接r 地
80
IECF – VECF
60
40
20
0
0.0
Tc = 125°C
0.5 1.0
-40
25
1.5
2.0
2.5
Collector-emitter forward voltage VECF (V)
Irr, trr – di/dt
50 1
trr
40
Common emitter
IECF = 60 A
Tc = 25°C
0.8
30 0.6
20 0.4
10 0.2
00
0 50 100 150 200 250
di/dt (A/ms)
5 2002-01-18
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GT60N321.PDF ] | |
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