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Número de pieza | GT5G131 | |
Descripción | Strobe Flash Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT5G131 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G131
GT5G131
Strobe Flash Applications
Unit: mm
• 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A)
• Supplied in compact and thin package requires only a small
mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• Peak collector current: IC = 130 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 400 V
Gate-emitter voltage
DC VGES
±6
V
Pulse
VGES
±8
Collector current
DC
1 ms
IC
ICP
5
A
130
Collector power dissipation (Note 1)
PC
1.1 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55~150
°C
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 × 1.5 t]
JEDEC
―
JEITA
―
TOSHIBA
2-6J1C
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/µs.
1234
1 2002-05-17
1 page Switching Time – RG
10
1
0.1
1
toff
tf
ton
tr
Common emitter
VCE = 300 V
VGE = 3 V
IC = 130 A
Tc = 25°C
10 100
Gate resistance RG (Ω)
1000
GT5G131
VCE, VGE – QG
500 10
400 8
300 6
200 4
VGE
Common emitter
100
VCC = 300 V
2
VCE
RL = 2.3 Ω
Tc = 25°C
00
0 20 40 60 80
Gate charge QG (nC)
Switching Time – ICP
10
1
0.1
0
toff
ton
tf
Common emitter
tr VCC = 300 V
VGE = 3 V
RG = 30 Ω
Tc = 25°C
50 100 150 200
Collector current IC (A)
Maximum Operating Area
800
600
400
VCM = 350 V
200 Tc <= 70°C
VGE = 4 V
10 Ω <= RG <= 300 Ω
0
0 40
80
120 160
Peak collector current ICP (A)
200
Minimum Gate Drive Area
200
160
120 Tc = 25°C
70
80
40
0
0246
Gate-emitter voltage VGE (V)
8
5
2002-05-17
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet GT5G131.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT5G131 | Strobe Flash Applications | Toshiba Semiconductor |
GT5G133 | Strobe Flash Applications | Toshiba Semiconductor |
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