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VMMK-2403 の電気的特性と機能

VMMK-2403のメーカーはAVAGOです、この部品の機能は「2 to 4 GHz GaAs High Linearity LNA」です。


製品の詳細 ( Datasheet PDF )

部品番号 VMMK-2403
部品説明 2 to 4 GHz GaAs High Linearity LNA
メーカ AVAGO
ロゴ AVAGO ロゴ 




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VMMK-2403 Datasheet, VMMK-2403 PDF,ピン配置, 機能
VMMK-2403
2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
Data Sheet
Description
Avago’s VMMK-2403 is an easy-to-use, high linearity low
noise amplifier in a miniaturized wafer level package
(WLP). The low noise and unconditionally stable perfor-
mance makes this amplifier ideal as a primary or subse-
quent gain block of an RF receiver in applications from
2–4GHz. A 3V, 38mA power supply is required for optimal
performance.
This amplifier is fabricated with enhancement E-pHEMT
technology and industry leading revolutionary wafer level
package. The GaAsCap wafer level sub-miniature leadless
package is small and ultra thin yet can be handled and
placed with standard 0402 pick and place assembly. This
product is easy to use since it requires only positive DC
voltages for bias and no matching coefficients are required
for impedance matching to 50 Ω systems.
WLP 0402, 1mm x 0.5mm x 0.25 mm
FY
Features
1 x 0.5 mm Surface Mount Package
Ultrathin (0.25mm)
Unconditionally Stable
50Ohm Input and Output Match
RoHS6 + Halogen Free
Specifications (Vdd = 3.0V, Idd = 37mA)
Output IP3: 28dBm
Small-Signal Gain: 16dB
Noise Figure: 1.7dB
Applications
2.4 GHz, 3.5GHz WLAN and WiMax notebook computer,
access point and mobile wireless applications
802.16 & 802.20 BWA systems
Radar, radio and ECM systems
Pin Connections (Top View)
Input
FY
Output
/ Vdd
Input
Amp
Note:
“F” = Device Code
“Y” = Month Code
Output
/ Vdd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50V
ESD Human Body Model = 125V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.

1 Page





VMMK-2403 pdf, ピン配列
Product Consistency Distribution Charts at 3.0 GHz, Vd = 3V
LSL USL LSL
USL
.031 .033 .035 .037 .039
Id, LSL=0.030 A, Nominal=0.037 A, USL=0.045 A
.041
.043
15 16 17
Gain @ 3GHz, LSL=14 dB, Nominal=16 dB, USL=18 dB
LSL LSL USL
27 28 29
OIP3 at 3GHz, LSL=26 dBm, Nominal=27.85 dBm
30 .5 .6 .7 .8 .9 1 1.1 1.2 1.3 1.4 1.5 1.6
NF @ 3GHz, Nominal=1.69 dB, USL=2.20 dB
Note: Distribution data based on 500 part sample size from skew lots during initial characterization.
Measurements were obtained using 300um G-S production wafer probe.
Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits.
3


3Pages


VMMK-2403 電子部品, 半導体
VMMK-2403 Typical Performance (continue)
(TA = 25°C, Vdd = 3V, Idd = 38mA, Zin = Zout = 50 unless noted)
20 35
15 30
10 25
5 25C
-40C
85C
0
12
34
Frequency (GHz)
Figure 13. Output P-1dB over Temp [3]
5
20
15
6 1234
Frequency (GHz)
Figure 14. Output IP3 Over Vdd [2,3]
3V
4V
5V
56
20
15
10
5 25C
85C
-40C
0
12
Figure 15. Gain over Temp [3]
34
Frequency (GHz)
5
5.0
4.0
3.0
2.0
1.0
6 1234
Frequency (GHz)
Figure 16 Noise Figure over Temp [3]
-40C
25C
85C
56
00
-10 -10
-20
-30
1
23 4
Frequency (GHz)
Figure 17. Input Return Loss Over Temp [3]
25C
-40C
85C
56
-20
-30
1
234
Frequency (GHz)
Figure 18. Output Return Loss Over Temp [3]
Notes:
1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package
2. Output IP3 data taken at Pin=-15dBm
3. Over temp data taken on a test fixture (Figure 20) without de-embedding
6
25C
85C
-40C
56

6 Page



ページ 合計 : 11 ページ
 
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共有リンク

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部品番号部品説明メーカ
VMMK-2403

2 to 4 GHz GaAs High Linearity LNA

AVAGO
AVAGO


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