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GS816036T-200 の電気的特性と機能

GS816036T-200のメーカーはETCです、この部品の機能は「1M x 18/ 512K x 32/ 512K x 36 18Mb Sync Burst SRAMs」です。


製品の詳細 ( Datasheet PDF )

部品番号 GS816036T-200
部品説明 1M x 18/ 512K x 32/ 512K x 36 18Mb Sync Burst SRAMs
メーカ ETC
ロゴ ETC ロゴ 




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GS816036T-200 Datasheet, GS816036T-200 PDF,ピン配置, 機能
100-Pin TQFP
Commercial Temp
Industrial Temp
Preliminary
GS816018/32/36T-250/225/200/166/150/133
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
250 MHz133 MHz
2.5 V or 3.3 V VDD
2.5 V or 3.3 V I/O
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
-250 -225 -200 -166 -150 -133 Unit
Pipeline
3-1-1-1
tKQ
tCycle
2.5 2.7 3.0 3.4 3.8 4.0 ns
4.0 4.4 5.0 6.0 6.7 7.5 ns
3.3 V
2.5 V
Curr (x18) 280 255 230 200 185 165 mA
Curr (x32/x36) 330 300 270 230 215 190 mA
Curr (x18) 275 250 230 195 180 165 mA
Curr (x32/x36) 320 295 265 225 210 185 mA
Flow
Through
2-1-1-1
tKQ
tCycle
5.5 6.0 6.5 7.0 7.5 8.5 ns
5.5 6.0 6.5 7.0 7.5 8.5 ns
3.3 V
2.5 V
Curr (x18) 175 165 160 150 145 135 mA
Curr (x32/x36) 200 190 180 170 165 150 mA
Curr (x18) 175 165 160 150 145 135 mA
Curr (x32/x36) 200 190 180 170 165 150 mA
Functional Description
Applications
The GS816018/32/36T is an 18,874,368-bit (16,777,216-bit
for x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS816018/32/36T operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (VDDQ) pins are used to decouple output noise
from the internal circuits and are 3.3 V and 2.5 V compatible.
Rev: 2.12 3/2002
1/28 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

1 Page





GS816036T-200 pdf, ピン配列
GS816032 100-Pin TQFP Pinout
Preliminary
GS816018/32/36T-250/225/200/166/150/133
NC
DQC8
DQC7
VDDQ
VSS
DQC6
DQC5
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
FT
VDD
NC
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
DQD6
VSS
VDDQ
DQD7
DQD8
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 80
2 79
3 78
4 77
5 76
6 75
7 74
8 73
9
10
512K x 32
72
71
11 Top View
70
12 69
13 68
14 67
15 66
16 65
17 64
18 63
19 62
20 61
21 60
22 59
23 58
24 57
25 56
26 55
27 54
28 53
29 52
30 51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
DQB8
DQB7
VDDQ
VSS
DQB6
DQB5
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
DQA5
DQA6
VSS
VDDQ
DQA7
DQA8
NC
Rev: 2.12 3/2002
3/28 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.


3Pages


GS816036T-200 電子部品, 半導体
Preliminary
GS816018/32/36T-250/225/200/166/150/133
GS816018/32/36 Block Diagram
A0An
Register
DQ
A0
A1
LBO
ADV
CK
ADSC
ADSP
GW
BW
BA
BB
BC
BD
D0 Q0
D1 Q1
Counter
Load
A0
A1
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
A
Memory
Array
QD
36
4
36
E1
E2
E3
FT
G
Power Down
ZZ
Control
Note: Only x36 version shown for simplicity.
Register
DQ
Register
DQ
1
DQx1DQx9
Rev: 2.12 3/2002
6/28 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
GS816036T-200

1M x 18/ 512K x 32/ 512K x 36 18Mb Sync Burst SRAMs

ETC
ETC
GS816036T-200I

1M x 18/ 512K x 32/ 512K x 36 18Mb Sync Burst SRAMs

ETC
ETC


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