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Datasheet SP24V001-ZZA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SP24V001-ZZA | Display Module |  HITACHI | display |
SP2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SP200 | +5V High-Speed RS-232 Transceivers with 0.1mF Capacitors ®
SP200/204/205/206/207/208/211/213
+5V High–Speed RS-232 Transceivers with 0.1µF Capacitors
■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.1µF External Charge Pump Capacitors 120kbps Data Rate Standard SOIC and SSOP Packages Multiple Drivers and Receivers Single 5V Supply Operation 1µA Shutdown  Sipex transceiver | | |
| 2 | SP200F | (SP200F / SP250F) Rectifier Stacks
12,500 V - 25,000 V Rectifier Stacks
0.5 A Forward Current 150 ns Recovery Time
SP125F SP150F SP200F SP250F
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
Part Number Working Reverse Voltage (Vrwm) Average Rectified Current (in oil) (Io) 55°C Volts SP125F SP150F SP200F SP250F  VMI rectifier | | |
| 3 | SP200S | (SP200S / SP250S) Rectifier Stacks
15,000 V - 30,000 V Rectifier Stacks
0.5 A Forward Current 3000 ns Recovery Time
SP150S SP200S SP250S SP300S
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
Part Number Working Reverse Voltage (Vrwm) Average Rectified Current (in oil) (Io) 55°C Volts SP150S SP200S SP250S SP300 VMI rectifier | | |
| 4 | SP201 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
SP201
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o  Polyfet RF Devices transistor | | |
| 5 | SP20100R | 20.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente
SP20100R
Voltage 100V 20.0 Amp Schottky Barrier Rectifiers
RoHS Compliant Product A suffix of “-C” specifies halogen free
FEATURES
Low forward voltage drop High current capability High reliability High surge current capability Epitaxial constructi  SeCoS rectifier | | |
| 6 | SP2013 | P-Channel Enhancement Mode Field Effect Transistor Green Product
SP2013
Ver 1.1
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
20 @ VGS=-4.5V 21 @ VGS=-4.0V -20V -8.5A 22 @ VGS=-3.7V 25 @ VGS=-3.1V 28 @ VGS=-2.5V
FEATURES Super high dense cell design for low R DS(O  SamHop transistor | | |
| 7 | SP20150 | VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers SP20150
Elektronische Bauelemente
VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
ITO-220
FEATURES
* Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction SeCoS rectifier | | |
| 8 | SP20150R | 20.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente
SP20150R
Voltage 150 V 20.0 Amp Schottky Barrier Rectifiers
FEATURES
Low forward voltage drop High current capability High reliability High surge current capability Epitaxial construction
RoHS Compliant Product A suffix of “-C” specifies halogen f SeCoS rectifier | | |
| 9 | SP202 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
SP202
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o Polyfet RF Devices transistor | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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