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VNN7NV04PTR-E の電気的特性と機能

VNN7NV04PTR-EのメーカーはSTMicroelectronicsです、この部品の機能は「OMNIFET II fully autoprotected Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 VNN7NV04PTR-E
部品説明 OMNIFET II fully autoprotected Power MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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VNN7NV04PTR-E Datasheet, VNN7NV04PTR-E PDF,ピン配置, 機能
VNN7NV04P-E, VNS7NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Type
RDS(on) Ilim Vclamp
VNN7NV04P-E 60 mΩ
VNS7NV04P-E
6A
40 V
Linear current limitation
Thermal shutdown
Short circuit protection
Integrated clamp
Low current drawn from input pin
Diagnostic feedback through input pin
ESD protection
Direct access to the gate of the Power
MOSFET (analog driving)
Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European
Directive
2
3
2
1
SOT-223
SO-8
Description
The VNN7NV04P-E, VNS7NV04P-E, are
monolithic devices designed in
STMicroelectronics VIPower™ M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
September 2013
Table 1. Device summary
Package
Order codes
Tube
Tape and reel
SOT-223
- VNN7NV04PTR-E
SO-8
VNS7NV04P-E VNS7NV04PTR-E
Doc ID 15632 Rev 4
1/29
www.st.com
1

1 Page





VNN7NV04PTR-E pdf, ピン配列
VNN7NV04P-E, VNS7NV04P-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
SOT-223 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Doc ID 15632 Rev 4
3/29


3Pages


VNN7NV04PTR-E 電子部品, 半導体
Electrical specifications
2 Electrical specifications
VNN7NV04P-E, VNS7NV04P-E
Figure 3. Current and voltage conventions
ID
IIN RIN
INPUT
DRAIN
SOURCE
VDS
VIN
2.1
6/29
Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VIN
IIN
RIN MIN
ID
IR
VESD1
VESD2
Ptot
EMAX
EMAX
Tj
Tc
Tstg
Drain-source voltage (VIN = 0 V)
Input voltage
Input current
Minimum input series impedance
Drain current
Reverse DC output current
Electrostatic discharge (R = 1.5 KΩ,
C = 100 pF)
Electrostatic discharge on output pin only
(R = 330 Ω, C = 150 pF)
Total dissipation at Tc = 25 °C
Maximum switching energy (L = 0.7 mH;
RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C;
IL = 9 A)
Maximum switching energy (L = 0.6 mH;
RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C;
IL = 9 A)
Operating junction temperature
Case operating temperature
Storage temperature
Doc ID 15632 Rev 4
Value
SOT-223
SO-8
Internally clamped
Internally clamped
+/-20
150
Internally limited
-10.5
4000
16500
7 4.6
40
Unit
V
V
mA
Ω
A
A
V
V
W
mJ
37
Internally limited
Internally limited
-55 to 150
mJ
°C
°C
°C

6 Page



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部品番号部品説明メーカ
VNN7NV04PTR-E

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics
STMicroelectronics


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