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STU313DのメーカーはSamHopです、この部品の機能は「Dual Enhancement Mode Field Effect Transistor」です。 |
部品番号 | STU313D |
| |
部品説明 | Dual Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop | ||
ロゴ | |||
このページの下部にプレビューとSTU313Dダウンロード(pdfファイル)リンクがあります。 Total 11 pages
STU313D
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
30V 16A
24 @ VGS=10V
35 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-30V
-15A
33 @ VGS=-10V
52 @ VGS=-4.5V
D1/D2
S1
G1
S2 G2
TO-252-4L
D1 D2
G1 G2
S 1 N-ch
S 2 P-ch
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
N-Channel P-Channel
VDS Drain-Source Voltage
VGS Gate-Source Voltage
30 -30
±20 ±20
ID Drain Current-Continuous a
IDM -Pulsed b
TC=25°C
TC=70°C
16 -15
12.5 -11.5
45 -43
I AS
EAS
Sigle Pulse Avalanche Current d
Sigle Pulse Avalanche Energy d
L=0.5mH
7.5 5.0
14 6.3
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
10
6.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient a
12
60
Units
V
V
A
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,30,2008
www.samhop.com.tw
1 Page STU313D
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
-30 V
-1 uA
±10 uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VDS=VGS , ID=-250uA
VGS=-10V , ID=-7.5A
VGS=-4.5V , ID=-6A
VDS=-10V , ID=-7.5A
-1 -1.7
26
39
10
-3 V
33 m ohm
52 m ohm
S
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=-15V,VGS=0V
f=1.0MHz
815 pF
225 pF
130 pF
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=-15V
ID=-1A
VGS=-10V
RGEN=6 ohm
VDS=-15V,ID=-7.5A,VGS=-10V
VDS=-15V,ID=-7.5A,VGS=-4.5V
VDS=-15V,ID=-7.5A,
VGS=-10V
11.8
18
65
39
16
7.8
1.6
4.8
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS=-2A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
-2
-0.78 -1.3
A
V
Jul,30,2008
3 www.samhop.com.tw
3Pages STU313D
Ver 1.0
15V
VDS
L
DR IVE R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
A
Unclamped Inductive Test Circuit
F igure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.00001
S INGLE PULS E
0.0001
0.001
0.01
P DM
t1
t2
1. R įJA (t)=r (t) * R įJA
2. R įJA=S ee Datas heet
3. T J M-T A = P DM* R įJ A (t)
4. Duty C ycle, D=t1/t2
0.1 1
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Jul,30,2008
6 www.samhop.com.tw
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
STU313D | Dual Enhancement Mode Field Effect Transistor | SamHop |