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STU435S の電気的特性と機能

STU435SのメーカーはSamHop Microelectronicsです、この部品の機能は「P-Channel Logic Level Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 STU435S
部品説明 P-Channel Logic Level Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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STU435S Datasheet, STU435S PDF,ピン配置, 機能
Gr
Pr
STU/D435S
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-40V
-38A
17.5 @ VGS=10V
27 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Sigle Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
-40
±20
-38
-30.4
-115
156
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,01,2011
www.samhop.com.tw

1 Page





STU435S pdf, ピン配列
STU435S
60
VGS = 10V
50
40
VGS = 4.5V
VGS = 4V VGS = 3.5V
30
20 VGS = 3V
10
0
0 1.0 2.0 3.0
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
36
30
VGS = 4.5V
24
18
12 VGS = 10V
6
0
1 12 24 36 48 60
-ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
1.1
VDS = VGS
ID = 250uA
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.0
35
-55 C
28 Tj=125 C
21
14
7
25 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1.5
1.4 VGS=10V
ID=19A
1.3
1.2
VGS=4.5V
1.1 ID=15A
1.0
0.9
0
25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.3
ID = 250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,01,2011
www.samhop.com.tw


3Pages


STU435S 電子部品, 半導体
STU/D435S
PACKAGE OUTLINE DIMENSIONS
TO-251
E
E2
L
D1
E1 D2
D
12 3
H
B2 L2 L1
B1
A
C
Ver 1.0
D3
PB
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
MILLIMETERS
MIN MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
4.900
5.300
6.700
7.300
7.000
8.000
13.700
15.300
6.300
6.700
4.600
4.900
4.800
5.200
1.300
1.700
1.400
0.500
1.800
0.900
2.300 BSC
6
A1
INCHES
MIN MAX
0.083
0.098
0.014
0.026
0.016
0.031
0.026
0.041
0.020
0.035
0.016
0.024
0.209
0.224
0.193
0.209
0.264
0.287
0.276
0.315
0.539
0.602
0.248
0.264
0.181
0.193
0.189
0.205
0.051
0.067
0.055
0.020
0.071
0.035
0.091 BSC
Jul,01,2011
www.samhop.com.tw

6 Page



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部品番号部品説明メーカ
STU435S

P-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


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