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STU307SのメーカーはSamHop Microelectronicsです、この部品の機能は「P-Channel Logic Level Enhancement Mode Field Effect Transistor」です。 |
部品番号 | STU307S |
| |
部品説明 | P-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTU307Sダウンロード(pdfファイル)リンクがあります。 Total 8 pages
STU/D307SGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-53A
9.5 @ VGS=-10V
14 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±20
-53
-42
-160
42
27
-55 to 150
3
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
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1
Jan,29,2010
www.samhop.com.tw
1 Page STU/D307S
100
VG S = -10V
80
VG S = -4.5V
VG S = -4V
60 VGS = -3.5V
40
VG S = -3V
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
40
32
24
125 C
16
25 C
8
-55 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
30
25
20
15
10
5
1
1
VG S = -4.5V
VG S = -10V
20 40
60 80 100
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.8
1.6
V G S =-10V
1.4 ID=-26.5A
1.2
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,29,2010
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Downloaded from Elcodis.com electronic components distributor
3Pages STU/D307S
PACKAGE OUTLINE DIMENSIONS
TO-251
E
E2
L
D1
E1 D2
D
12 3
H
B2 L2 L1
B1
A
C
Ver 1.0
D3
PB
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
MILLIMETERS
MIN MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
4.900
5.300
6.700
7.300
7.000
8.000
13.700
15.300
6.300
6.700
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
6
A1
INCHES
MIN MAX
0.083
0.098
0.014
0.026
0.016
0.031
0.026
0.041
0.020
0.035
0.016
0.024
0.209
0.224
0.193
0.209
0.264
0.287
0.276
0.315
0.539
0.602
0.248
0.264
0.181
0.193
0.189
0.205
0.051
0.067
0.055
0.071
0.020
0.035
0.091 BSC
Jan,29,2010
www.samhop.com.tw
Downloaded from Elcodis.com electronic components distributor
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
STU307S | P-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |