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STU303S の電気的特性と機能

STU303SのメーカーはSamHop Microelectronicsです、この部品の機能は「P-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 STU303S
部品説明 P-Channel Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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STU303S Datasheet, STU303S PDF,ピン配置, 機能
S TU/D303S
S amHop Microelectronics C orp.
Nov,16, 2007
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ω ) Max
-30V -24A
28 @ VGS = -10V
40 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rocteced
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TU S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Tc=25 C
-P ulsed a
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-30
20
-24
-96
-20
50
-55 to 175
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W
1

1 Page





STU303S pdf, ピン配列
S TU/D303S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = -10A
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-0.88 -1.3 V
25
V GS =-4V
20 V GS =-4.5V
15 V GS =-5V
10
V GS =-8V
V GS =-3V
V GS =-10V
5
0
0 0.5 1 1.5 2 2.5 3
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
15
10
T j=125 C
5
25 C -55 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
-V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
60
50
40 V GS =-4.5V
30
20
V GS =-10V
10
0
0 5 10 15 20 25
-ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.6
1.4 V G S =-10V
ID=-12A
1.2
1.0
0.8
V G S =-4.5V
0.6 ID=-6A
0.4
-55
-25 0 25 50 75 100 125
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3


3Pages


STU303S 電子部品, 半導体
S TU/D303S
E
E2
L
D1
E1 D2
D
12 3
H
B2 L2 L1
B1
A
C
D3
PB
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
MILLIMETERS
MIN MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
4.900
5.300
6.700
7.300
7.000
8.000
13.700
15.300
6.300
6.700
4.600
4.900
4.800
5.200
1.300
1.700
1.400
0.500
1.800
0.900
2.300 BSC
A1
INCHES
MIN MAX
0.083
0.098
0.014
0.026
0.016
0.031
0.026
0.041
0.020
0.035
0.016
0.024
0.209
0.224
0.193
0.209
0.264
0.287
0.276
0.315
0.539
0.602
0.248
0.264
0.181
0.193
0.189
0.205
0.051
0.067
0.055
0.071
0.020
0.035
0.091 BSC
6

6 Page



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共有リンク

Link :


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