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STD06L01のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Logic Level Enhancement Mode Field Effect Transistor」です。 |
部品番号 | STD06L01 |
| |
部品説明 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD06L01ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
STU06L01
Sa mHop Microelectronics C orp.
STD06L01Green
Product
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
353 @ VGS=10V
6A
553 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
6
4.8
17
3.6
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,30,2013
www.samhop.com.tw
1 Page STU06L01
STD06L01
3.0
VGS=10V
2.4
1.8
VGS=4.5V
VGS=4V
1.2
VGS=3.5V
0.6
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
900
750
600
450 V GS =4.5V
300
V GS =10V
150
0
0.01 0.6 1.2 1.8 2.4 3.0
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
6.0
4.8
3.6
Tj=125 C -55 C
2.4
25 C
1.2
0
0 123456
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.25
2.00
1.75
V G S =10V
ID=3A
1.50
1.25
1.00
V G S =4.5V
ID=2A
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=10mA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,30,2013
3 www.samhop.com.tw
3Pages STU06L01
STD06L01
Ver 1.1
E
b2
L3
D1
1
L4
e
E1 D
23
b1
b
1
DETAIL "A"
A
C
TO-252
H
L2
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
L A1
L1 DETAIL "A"
MILLIMETERS
MIN MAX
2.100
2.500
0.000
0.400
0.200
0.889
0.770
1.140
4.800
5.460
0.400
0.600
5.300
6.223
4.900
5.515
6.300
4.400
6.731
5.004
2.290 REF
8.900
10.400
1.397
1.770
2.743 REF.
0.508 REF.
0.890
1.700
0.500
1.100
0° 10°
7° REF.
INCHES
MIN MAX
0.083
0.098
0.000
0.016
0.030
0.008
0.035
0.045
0.189
0.016
0.215
0.024
0.209
0.245
0.193
0.217
0.248
0.173
0.265
0.197
0.090 BSC
0.350
0.409
0.055
0.070
0.108 REF.
0.020 REF.
0.035
0.067
0.020
0.043
0° 10°
7° REF.
Oct,30,2013
6 www.samhop.com.tw
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ STD06L01 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
STD06L01 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |