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Número de pieza | STU428S | |
Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
Fabricantes | SamHop Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STU428S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! S T U/D428S
S amHop Microelectronics C orp.
Mar.8,2007
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ωı ) T yp
40V 50A
8 @ VGS = 10V
10 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
40
20
Unit
V
V
Drain Current-Continuous @TC=25 C
-Pulsed a
ID
IDM
50
100
A
A
Drain-Source Diode Forward Current IS 20 A
Maximum Power Dissipation @Tc=25 C
PD
50
W
Operating and Storage Temperature Range TJ, TSTG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W
1
1 page S T U/D428S
2400
2000
1600
1200
C is s
800
6 400 C oss
C rss
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
10
VDS =15V
8 ID=10A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
220
100
60
10
T D(off)
)
T r T D(on)
Tf
V DS =15V ,ID=1A
1 V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (ı Ω)
F igure 11.s witching characteris tics
600
100
1ms
10
1001m0sms
1s
DC
V GS =10V
1 S ingle P ulse
Tc=25 C
0.5
0.1 1
10 30 60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet STU428S.PDF ] |
Número de pieza | Descripción | Fabricantes |
STU428S | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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