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Número de pieza | STT622S | |
Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
Fabricantes | SamHop Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STT622S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
76 @ VGS=10V
60V 4.2A
100 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C
TA=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
60
±20
4.2
3.4
28
16
3
1.9
-55 to 150
42
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,30,2010
www.samhop.com.tw
1 page STT622S
Ver 1.0
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
F igure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.001
0.01 0.1
1
Square Wave Pulse Duration(sec)
P DM
t1
t2
1. RthJA (t)=r (t) * R th JA
2. RthJA=See Datasheet
3. TJM-TA = PDM* RthJA (t)
4. Duty Cycle, D=t1/t2
10 100
Figure 14. Normalized Thermal Transient Impedance Curve
1000
Jul,30,2010
5 www.samhop.com.tw
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet STT622S.PDF ] |
Número de pieza | Descripción | Fabricantes |
STT622S | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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