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FDS6676SのメーカーはFairchild Semiconductorです、この部品の機能は「30V N-Channel PowerTrench SyncFET」です。 |
部品番号 | FDS6676S |
| |
部品説明 | 30V N-Channel PowerTrench SyncFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS6676Sダウンロード(pdfファイル)リンクがあります。 Total 6 pages
July 2002
FDS6676S
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6676S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6676S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Motor drives
Features
• 14.5 A, 30 V.
RDS(ON) typ 5.25 mΩ @ VGS = 10 V
RDS(ON) typ 6.00 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (43nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6676S
FDS6676S
13’’
5
6
7
8
Ratings
30
±16
14.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS6676S Rev E1 (W)
1 Page Typical Characteristics
50
VGS = 10V
4.5V
40
3.0V
3.5V
2.5V
30
20
10
0
0 0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 14.5A
VGS =10V
1.4
1.2
1
0.8
0.6
-55 -35 -15
5
25 45 65 85 105 120
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = 5V
40
30
20
10
0
1
TA = 125oC
25oC
-55oC
1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3
Figure 5. Transfer Characteristics.
2.4
2.2
2
VGS = 2.5V
1.8
1.6
1.4
1.2
1
0.8
0
10
3.0V
3.5V
4.5V
20 30
ID, DRAIN CURRENT (A)
10V
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.016
0.014
ID = 7.3 A
0.012
0.01
0.008
TA = 125oC
0.006
0.004
2
TA = 25oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
25oC
0.1
0.01
-55oC
0.001
0
0.2 0.4 0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6676S Rev E1 (W)
3Pages TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
FACT
ImpliedDisconnect PACMAN
SPM
ActiveArray FACT Quiet Series ISOPLANAR
POP
Stealth
Bottomless
CoolFET
FASTâ
FASTr
LittleFET
MicroFET
Power247
PowerTrenchâ
SuperSOT-3
SuperSOT-6
CROSSVOLT FRFET
MicroPak
QFET
SuperSOT-8
DOME
GlobalOptoisolator MICROWIRE
QS
SyncFET
EcoSPARK GTO
MSX
QT Optoelectronics TinyLogic
E2CMOSTM
HiSeC
MSXPro
Quiet Series
TruTranslation
EnSignaTM
I2C
OCX
OCXPro
Across the board. Around the world. OPTOLOGICâ
RapidConfigure UHC
RapidConnect
UltraFETâ
SILENT SWITCHERâ VCX
The Power Franchise
OPTOPLANAR SMART START
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I
6 Page | |||
ページ | 合計 : 6 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDS6676 | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS6676AS | 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
FDS6676S | 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |