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PDF GT80J101A Data sheet ( Hoja de datos )
| Número de pieza | GT80J101A | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Toshiba Semiconductor | |
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GT80J101A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101A
High Power Switching Applications
Unit: mm
· Enhancement-Mode
· High Speed: tf = 0.40 µs (max) (IC = 80 A)
· Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature
Screw torque
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
¾
Rating
600
±20
80
160
200
150
-55~150
0.8
Unit
V
V
A
W
°C
°C
N·m
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
Symbol
Test Condition
Min Typ. Max Unit
IGES
ICES
VGE (OFF)
VCE (sat) (1)
VCE (sat) (2)
Cies
VGE = ±25 V, VCE = 0
VCE = 600 V, VGE = 0
VCE = 5 V, IC = 80 mA
IC = 10 A, VGE = 15 V
IC = 80 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
¾ ¾ ±500 nA
¾ ¾ 1.0 mA
3.0 ¾ 6.0 V
¾ ¾ 2.0
V
¾ 2.4 3.0
¾ 5500 ¾
pF
tr ¾ 0.3 0.6
ton
tf
15 V
0
33 W
VIN
VOUT
-15 V VCC = 300 V
¾
¾
0.5 0.8
0.25 0.40
ms
toff ¾ 0.7 1.0
Rth (j-c)
¾ ¾ ¾ 0.625 °C/W
1 2002-01-18
1 page  
GT80J101A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5 2002-01-18
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GT80J101A.PDF ] | |
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