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PDF GT8G133 Data sheet ( Hoja de datos )
| Número de pieza | GT8G133 | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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GT8G133
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G133
Strobe Flash Applications
• Compact and Thin (TSSOP-8) package
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
• Peak collector current: IC = 150 A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
Collector current
Pulse
(Note 1)
Symbol
VCES
VGES
VGES
ICP
Rating
400
±6
±8
150
Unit
V
V
A
Collector power
dissipation（t＝10 s）
(Note 2a)
(Note 2b)
Junction temperature
Storage temperature range
PC (1)
PC (2)
Tj
Tstg
1.1
0.6
150
−55~150
W
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Thermal Characteristics
Characteristics
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
Symbol
Rth (j-a) (1)
Rth (j-a) (2)
Rating
114
208
Unit
°C/W
°C/W
Marking (Note 3)
Part No. (or abbreviation code)
8G133
Unit: mm
1.2.3 EMITTER
4 GATE
5.6.7.8 COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-3R1G
Weight: 0.035 g (typ.)
Circuit Configuration
8765
1234
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
1
2006-11-02
1 page  
VCE (sat) – TC
4
IC = 150 A
3 120
90
2
60
1
0
−50 0
Common emitter
VGE = 4 V
50 100 150
Case temperature Tc (°C)
10000
1000
100
C – VCE
Cies
Cres
Coes
Common emitter
VGE = 0 V
f = 1 MHz
Tc = 25°C
10
1 10 100 1000
Collector-emitter voltage VCE (V)
GT8G133
1.6
1.2
0.8
0.4
0
−50
VGE(OFF) – TC
Common emitter
VCE = 5 V
IC = 1 mA
0 50 100
Case temperature Tc (°C)
150
VCE, VGE – QG
600
6
500 5
VGE
400 4
300 3
200
100 VCE
Common emitter
VCC = 300 V
RL = 2.0 Ω
Tc = 25°C
2
1
00
0 10 20 30 40 50
Gate charge QG (nC)
Switching Time – RG
10
Common emitter
VCE = 300 V
VGE = 4 V
IC = 150 A
Tc = 25°C
ton
3
toff
tf
tr
1
1 10 100 1000
Gate resistance RG (Ω)
Switching Time – IC
10
toff
tf
1
ton
tr
0.1
0 50
Common emitter
VCC = 300 V
VGE = 4 V
RG = 51 Ω
Tc = 25°C
100 150
200
Collector current IC (A)
5 2006-11-02
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GT8G133.PDF ] | |
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