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PDF SKM200GM12T4 Data sheet ( Hoja de datos )
| Número de pieza | SKM200GM12T4 | |
| Descripción | Fast IGBT4 Modules | |
| Fabricantes | Semikron International | |
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SKM200GM12T4
SEMITRANS® 3
Fast IGBT4 Modules
SKM200GM12T4
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Typical Applications
• Matrix Inverter
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 7.6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 200 A
Tj = 150 °C
VGE = ±15 V
RG on = 1 Ω
RG off = 1 Ω
Tj = 150 °C
Tj = 150 °C
di/dton = 5500 A/µs Tj = 150 °C
di/dtoff = 2300 A/µs Tj = 150 °C
per IGBT
Values
1200
314
242
200
600
-20 ... 20
10
-40 ... 175
229
172
200
600
990
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.8
2.2
0.8
0.7
5.0
7.5
5.8
0.1
12.3
0.81
0.69
1130
3.8
185
40
21
425
82
20
max. Unit
2.05
2.4
0.9
0.8
5.8
8.0
6.5
0.3
0.14
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GM
© by SEMIKRON
Rev. 0 – 22.06.2009
1
1 page  
SKM200GM12T4
Semitrans 3
GM
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 0 – 22.06.2009
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SKM200GM12T4.PDF ] | |
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