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PDF SKM150GM12T4G Data sheet ( Hoja de datos )
| Número de pieza | SKM150GM12T4G | |
| Descripción | Fast IGBT4 Modules | |
| Fabricantes | Semikron International | |
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SKM150GM12T4G
SEMITRANS® 3
Fast IGBT4 Modules
SKM150GM12T4G
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Typical Applications
• Matrix Inverter
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 150 A
Tj = 150 °C
VGE = ±15 V
RG on = 1 Ω
RG off = 1 Ω
Tj = 150 °C
Tj = 150 °C
di/dton = 3400 A/µs Tj = 150 °C
di/dtoff = 1750 A/µs Tj = 150 °C
per IGBT
Values
1200
229
177
150
450
-20 ... 20
10
-40 ... 175
187
140
150
450
774
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.85 2.1 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
7.0 8.0 mΩ
10.3 11.0 mΩ
5 5.8 6.5 V
0.1 0.3 mA
mA
8.8 nF
0.58 nF
0.47 nF
850 nC
5.0 Ω
180 ns
42 ns
19.2 mJ
410 ns
72 ns
15.8 mJ
0.19 K/W
GM
© by SEMIKRON
Rev. 0 – 22.06.2009
1
1 page  
SKM150GM12T4G
Semitrans 3
GM
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 0 – 22.06.2009
5
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| PDF Descargar | [ Datasheet SKM150GM12T4G.PDF ] | |
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