|
|
PDF SKM300GB12V Data sheet ( Hoja de datos )
| Número de pieza | SKM300GB12V | |
| Descripción | IGBT Modules | |
| Fabricantes | Semikron International | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SKM300GB12V (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
SKM300GB12V
SEMITRANS® 3
SKM300GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 12 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
VCC = 600 V
Tj = 150 °C
IC = 300 A
VGE = ±15 V
RG on = 2.5
RG off = 2.5
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 7700 A/µs Tj = 150 °C
di/dtoff = 3500 A/µs
du/dtoff = 7500 V/ Tj = 150 °C
µs
per IGBT
Values
1200
420
319
300
900
-20 ... 20
10
-40 ... 175
353
264
300
900
1548
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.85 2.30 V
2.25 2.55 V
0.94 1.04 V
0.88 0.98 V
3.03 4.2 m
4.57 5.23 m
5.5 6 6.5 V
0.1 0.3 mA
mA
18 nF
1.77 nF
1.768
nF
3310
nC
2.5
340 ns
48 ns
23 mJ
576 ns
69 ns
33 mJ
0.11 K/W
GB
© by SEMIKRON
Rev. 5 – 23.03.2011
1
1 page  
SKM300GB12V
SEMITRANS 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 5 – 23.03.2011
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SKM300GB12V.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SKM300GB123D | IGBT Modules | Semikron International |
| SKM300GB123D | IGBT Modules | Semikron International |
| SKM300GB124D | IGBT Modules | Semikron International |
| SKM300GB124D | Low Loss IGBT Modules | Semikron International |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |