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VS-MUR2020CTPbF の電気的特性と機能

VS-MUR2020CTPbFのメーカーはVishayです、この部品の機能は「Ultrafast Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-MUR2020CTPbF
部品説明 Ultrafast Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-MUR2020CTPbF Datasheet, VS-MUR2020CTPbF PDF,ピン配置, 機能
www.vishay.com
VS-MUR2020CTPbF, VS-MUR2020CT-N3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 10 A FRED Pt®
TO-220AB
Base
common
cathode
2
2
Common
Anode cathode Anode
13
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-220AB
2 x 10 A
200 V
See Electrical table
See Recovery table
175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION/APPLICATIONS
VS-MUR2020CTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
Rated VR, TC = 145 °C
Rated VR, square wave, 20 kHz, TC = 145 °C
MAX.
200
10
20
100
20
- 65 to
175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
IF = 8 A, TJ = 125 °C
200
-
Forward voltage
VF IF = 16 A
-
IF = 16 A, TJ = 125 °C
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 200 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
-
-
-
-
-
55
8.0
MAX.
-
0.85
1.15
1.05
15
250
-
-
UNITS
V
μA
pF
nH
Revision: 11-Aug-11
1 Document Number: 94079
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-MUR2020CTPbF pdf, ピン配列
www.vishay.com
VS-MUR2020CTPbF, VS-MUR2020CT-N3
Vishay Semiconductors
100
10
TJ = 175 °C
1
TJ = 125 °C
TJ = 25 °C
0.1
0
0.4 0.8 1.2 1.6 2.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100
TJ = 175 °C
10 TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
0.001
0
TJ = 25 °C
50 100 150 200 250
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100 TJ = 25 °C
10
0
10 100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
.
1
Revision: 11-Aug-11
3 Document Number: 94079
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-MUR2020CTPbF 電子部品, 半導体
www.vishay.com
ORDERING INFORMATION TABLE
VS-MUR2020CTPbF, VS-MUR2020CT-N3
Vishay Semiconductors
Device code VS- MUR 20 20 CT PbF
1 2 3 456
1 - Vishay Semiconductors product
2 - Ultrafast MUR series
3 - Current rating (20 = 20 A)
4 - Voltage rating (20 = 200 V)
5 - CT = Center tap (dual)
6 - Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
VS-MUR2020CTPbF
50
VS-MUR2020CT-N3
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Dimensions
Part marking information
SPICE model
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95222
TO-220ABPbF
www.vishay.com/doc?95225
TO-220AB-N3
www.vishay.com/doc?95028
www.vishay.com/doc?95272
Revision: 11-Aug-11
6 Document Number: 94079
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-MUR2020CTPbF

Ultrafast Rectifier ( Diode )

Vishay
Vishay


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