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VS-MBR1035PbF の電気的特性と機能

VS-MBR1035PbFのメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-MBR1035PbF
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-MBR1035PbF Datasheet, VS-MBR1035PbF PDF,ピン配置, 機能
VS-MBR10...PbF Series, VS-MBR10...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 10 A
Base
cathode
2
TO-220AC
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
13
Cathode Anode
TO-220AC
10 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
Single die
8 mJ
FEATURES
• 150 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
IFRM
VRRM
TC = 135 °C
IFSM tp = 5 μs sine
VF 10 Apk, TJ = 125 °C
TJ Range
VALUES
10
20
35/45
1060
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse
voltage
VR
Maximum working peak
reverse voltage
VRWM
VS-MBR1035PbF
35
VS-MBR1035-N3
35
VS-MBR1045PbF
45
VS-MBR1045-N3 UNITS
45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Peak repetitive forward current
IFRM
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
TC = 135 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 135 °C
Following any rated load
5 µs sine or 3 µs rect. pulse condition
and with rated VRRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
10
20
UNITS
A
1060
150
8
2
A
mJ
A
Revision: 29-Aug-11
1 Document Number: 94284
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-MBR1035PbF pdf, ピン配列
VS-MBR10...PbF Series, VS-MBR10...-N3 Series
www.vishay.com
Vishay Semiconductors
100
TJ = 150 °C
10 TJ = 125 °C
TJ = 25 °C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
1
0.1
0.01
0.001
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
TJ = 150 °C
TJ = 100 °C
TJ = 50 °C
0.0001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.00001
Single pulse
(thermal resistance)
0.0001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.001
0.01
0.1
1.0
t1 - Rectangular Pulse Duration (s)
10
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
100
Revision: 29-Aug-11
3 Document Number: 94284
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-MBR1035PbF 電子部品, 半導体
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
(6)
E
E2 (7)
Q
(6) D
L3
D1
1 23
L4
A
ØP
0.014 M B A M
Detail B
(6) H1
(7)
A
C
L
B
Seating
plane
A
A1
e1
0.015 M B A M
cA
A2
E
H1
θ
Thermal pad
1 23
DD
CC
L1
D2 (6)
2 x b2
2xb
Detail B
E1 (6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Lead tip
View A - A
Conforms to JEDEC outline TO-220AC
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.25 4.65 0.167 0.183
E1
6.86 8.89 0.270 0.350
6
A1 1.14 1.40 0.045 0.055
E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115
e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040
e1 4.88 5.28 0.192 0.208
b1
0.38 0.97 0.015 0.038
4
H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068
L 13.52 14.02 0.532 0.552
b3
1.14 1.73 0.045 0.068
4
L1
3.32 3.82 0.131 0.150
2
c 0.36 0.61 0.014 0.024
L3 1.78 2.13 0.070 0.084
c1
0.36 0.56 0.014 0.022
4
L4
0.76 1.27 0.030 0.050
2
D
14.85 15.25 0.585 0.600
3
Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355
Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6
90° to 93° 90° to 93°
E
10.11 10.51 0.398 0.414
3, 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following:
Revision: 07-Mar-11
www.vishay.com
1

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部品番号部品説明メーカ
VS-MBR1035PbF

Schottky Rectifier ( Diode )

Vishay
Vishay


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