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PDF BTB04-600SL Data sheet ( Hoja de datos )
| Número de pieza | BTB04-600SL | |
| Descripción | Triacs | |
| Fabricantes | INCHANGE | |
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INCHANGE Semiconductor
isc Triacs
isc Product Specification
BTB04-600SL
FEATURES
·With TO-220AB non insulated package
·Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN UNIT
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
600 V
Repetitive peak reverse voltage
600 V
RMS on-state current (full sine wave)Tj=105℃
4
A
Non-repetitive peak on-state current tp=20ms
35
A
Operating junction temperature
110 ℃
Storage temperature
-45~150 ℃
Thermal resistance, junction to case
3 ℃/W
Thermal resistance, junction to ambient
60 ℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
Ⅰ
VR=VRRM,
VR=VRRM, Tj=125℃
VD=VDRM,
VD=VDRM, Tj=125℃
IGT Gate trigger current
Ⅱ
VD=12V; RL= 33Ω
Ⅲ
Ⅳ
IH Holding current
IGT= 0.1A, Gate Open
VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω
VTM On-state voltage
IT= 5A ; tp= 380μs
isc website：www.iscsemi.cn
MAX
0.01
0.5
0.01
0.5
10
10
10
25
15
1.3
1.5
UNIT
mA
mA
mA
mA
V
V
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| PDF Descargar | [ Datasheet BTB04-600SL.PDF ] | |
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