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VS-ST180S20P0PBF の電気的特性と機能

VS-ST180S20P0PBFのメーカーはVishayです、この部品の機能は「Phase Control Thyristors」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-ST180S20P0PBF
部品説明 Phase Control Thyristors
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-ST180S20P0PBF Datasheet, VS-ST180S20P0PBF PDF,ピン配置, 機能
www.vishay.com
VS-ST180SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 200 A
TO-209AB (TO-93)
PRODUCT SUMMARY
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Package
200 A
400 V,800 V, 1200 V, 1600 V, 2000 V
1.75 V
150 mA
-40 °C to 125 °C
TO-209AB (TO-93)
Diode variation
Single SCR
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to
1200 V)
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
200
85
314
5000
5230
125
114
400 to 2000
100
-40 to 125
UNITS
A
°C
A
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
04 400
08 800
VS-ST180S
12
1200
16 1600
20 2000
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
1300
1700
2100
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
30
Revision: 11-Mar-14
1 Document Number: 94397
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-ST180S20P0PBF pdf, ピン配列
www.vishay.com
VS-ST180SPbF Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
TEST CONDITIONS
PGM
PG(AV)
IGM
+ VGM
- VGM
IGT
VGT
IGD
VGD
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = TJ maximum
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
VALUES
TYP. MAX.
10
2.0
3.0
20
5.0
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
10
UNITS
W
A
V
mA
V
mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
TStg
RthJC
RthC-hs
DC operation
Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheeet
VALUES
UNITS
-40 to 125
-40 to 150
°C
0.105
0.04
K/W
31
(275)
24.5
(210)
N·m
(lbf in)
280 g
TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
TEST CONDITIONS
180°
0.015
0.012
120°
0.019
0.020
90°
0.025
0.027
TJ = TJ maximum
60°
0.036
0.037
30°
0.060
0.060
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 11-Mar-14
3 Document Number: 94397
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-ST180S20P0PBF 電子部品, 半導体
www.vishay.com
VS-ST180SPbF Series
Vishay Semiconductors
100
Rec tangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Rec ommended load line for
<=30% rated di/ dt : 10V, 10ohms
10 tr<=1 µs
(b)
(a)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
1
0.1
0.001
VGD
IGD
Device: ST180SSeries
(1) (2) (3) (4)
Frequency Limited by PG(AV)
0.01
0.1 1
InstantaneousGate Current (A)
10
100
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code VS- ST 18 0 S 20 P 0 - PbF
1 2 3 4 5 6 7 8 9 10
1 - Vishay Semiconductors product
2 - Thyristor
3 - Essential part number
4 - 0 = Converter grade
5 - S = Compression bonding stud
6 - Voltage code x 100 = VRRM (see Voltage Ratings table)
7 - P = Stud base 3/4"-16UNF2A threads
8 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
9 - V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
10 - None = Standard production
- PbF = Lead (Pb)-free
Note: For metric device M16 x 1.5 contact factory
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95082
Revision: 11-Mar-14
6 Document Number: 94397
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-ST180S20P0PBF

Phase Control Thyristors

Vishay
Vishay


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