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MMBTA63LT1GのメーカーはON Semiconductorです、この部品の機能は「Darlington Transistors」です。 |
部品番号 | MMBTA63LT1G |
| |
部品説明 | Darlington Transistors | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMMBTA63LT1Gダウンロード(pdfファイル)リンクがあります。 Total 4 pages
MMBTA63LT1G,
MMBTA64LT1G,
SMMBTA64LT1G
Darlington Transistors
PNP Silicon
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCES
VCBO
VEBO
IC
−30
−30
−10
−500
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25C
Derate above 25C
Symbol
PD
Max
225
1.8
Unit
mW
mW/C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25C
Derate above 25C
RqJA
PD
556 C/W
300 mW
2.4 mW/C
Thermal Resistance, Junction−to−Ambient RqJA
417 C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 5
1
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
BASE
1
COLLECTOR 3
EMITTER 2
MARKING DIAGRAM
2x M G
G
1
2x = Device Code
x = U for MMBTA63LT1G
x = V for MMBTA64LT1G
SMMBTA64LT1G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBTA63LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBTA64LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
SMMBTA64LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBTA63LT1/D
1 Page 200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
-0.3
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
TA = 125C
25C
-55C
VCE = -2.0 V
-5.0 V
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-50 -70 -100
-10 V
-200 -300
-2.0
TA = 25C
-1.6
VBE(sat) @ IC/IB = 100
-1.2
VBE(on) @ VCE = -5.0 V
-0.8 VCE(sat) @ IC/IB = 1000
IC/IB = 100
-0.4
0
-0.3 -0.5 -1.0
-2 -3 -5 -10 -20 -30 -50 -100 -200 -300
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltage
-2.0
TA = 25C
-1.8
-1.6
IC = -10 mA -50 mA -100 mA -175 mA
-1.4
-300 mA
-1.2
-1.0
-0.8
-0.6
-0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-200-500 -1K-2K -5K-10K
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10
VCE = -5.0 V
4.0 f = 100 MHz
3.0 TA = 25C
2.0
1.0
0.4
0.2
0.1
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
Figure 4. High Frequency Current Gain
-1K
1
1 ms
10 ms
0.1 100 ms
1s
0.01 Thermal Limit
Single Pulse Test
@ TA = 25C
0.001
0.01
0.1
1.0
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
100
http://onsemi.com
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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MMBTA63LT1G | Darlington Transistors | ON Semiconductor |