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PDF SKM200GB12T4 Data sheet ( Hoja de datos )
| Número de pieza | SKM200GB12T4 | |
| Descripción | Fast IGBT4 Modules | |
| Fabricantes | Semikron | |
| Logotipo |  |
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SKM200GB12T4
SEMITRANS® 3
Fast IGBT4 Modules
SKM200GB12T4
Features
• IGBT4 = 4. generation fast trench IGBT
(Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
20kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 7.6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 200 A
VGE = ±15 V
RG on = 1
RG off = 1
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 5500 A/µs Tj = 150 °C
di/dtoff = 2300 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Values
1200
313
241
200
600
-20 ... 20
10
-40 ... 175
229
172
200
600
990
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.80 2.05 V
2.20 2.40 V
0.8 0.9 V
0.7 0.8 V
5.00 5.75 m
7.50 8.00 m
5 5.8 6.5 V
2.7 mA
mA
12.3 nF
0.81 nF
0.69 nF
1130
nC
3.8
185 ns
40 ns
21 mJ
425 ns
82 ns
20 mJ
0.14 K/W
GB
© by SEMIKRON
Rev. 3 – 03.09.2013
1
1 page  
SKM200GB12T4
SEMITRANS 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 3 – 03.09.2013
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SKM200GB12T4.PDF ] | |
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