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MMST4401 の電気的特性と機能

MMST4401のメーカーはROHM Semiconductorです、この部品の機能は「NPN Medium Power Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMST4401
部品説明 NPN Medium Power Transistor
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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MMST4401 Datasheet, MMST4401 PDF,ピン配置, 機能
Transistors
SST4401 / MMST4401
NPN Medium Power Transistor
(Switching)
SST4401 / MMST4401
zFeatures
1) BVCEO>40V (IC=1mA)
2) Complements the SST4403 / MMST4403.
zPackage, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
zDimensions (Unit : mm)
SST4401
ROHM : SST3
MMST4401
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
60
40
6
0.6
Collector power dissipation
0.2
PC
0.35
Junction temperature
Tj
Storage temperature
Tstg
Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE
150
55 to +150
Unit
V
V
V
A
W
W
˚C
˚C
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
hFE
fT
Cob
Cib
td
tr
tstg
tf
Min.
60
40
6
20
40
80
100
40
250
Typ.
Max.
0.1
0.1
0.4
0.75
0.95
1.2
300
6.5
30
15
20
225
30
Unit
V
V
V
µA
µA
V
V
MHz
pF
pF
ns
ns
ns
ns
Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=35V
VEB=5V
IC/IB=150mA/15mA
IC/IB=500mA/50mA
IC/IB=150mA/15mA
IC/IB=500mA/50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IE= 20mA, f=100MHz
VCB=10V, f=100kHz
VEB=0.5V, f=100kHz
VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
VCC=30V, IC=150mA, IB1=-IB2=15mA
VCC=30V, IC=150mA, IB1=-IB2=15mA
Rev.B
1/3

1 Page





MMST4401 pdf, ピン配列
Transistors
SST4401 / MMST4401
1.8
Ta=25°C
1000
Ta=25°C
VCE=10V
IC / IB=10
1.6
1.2
0.8
0.4
0
1 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.7 Grounded emitter propagation
characteristics
100
VCC=30V
10V
10
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.8 Turn-on time vs. collector
current
500
Ta=25°C
VCC=30V
IC / IB=10
100
10
5
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.9 Rise time vs. collector
current
1000
100
Ta=25°C
VCC=30V
IC=10IB1=10IB2
1000
100
Ta=25°C
VCC=30V
IC=10IB1=10IB2
100
Ta=25°C
f=1MHz
Cib
10 Cob
10
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.10 Storage time vs. collector
current
10
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.11 Fall time vs. collector
current
1
0.1 1.0 10 100
REVERSE BIAS VOLTAGE(V)
Fig.12 Input / output capacitance
vs. voltage
100
100MHz 250MHz 300MHz
200MHz
10
1
Ta=25°C
250MHz
1000
100
Ta=25°C
VCE=10V
0.1
1
10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.13 Gain bandwidth product
10
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.14 Gain bandwidth product
vs. collector current
Rev.B
3/3


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共有リンク

Link :


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MMST4401

NPN Medium Power Transistor

ROHM Semiconductor
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ROHM Semiconductor


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